Demonstration of programmable light intensity of a micro-LED with a Hf-based ferroelectric ITZO TFT for Mura-free displays

Taewon Jin; Sanghyeon Kim; Jae-Hoon Han; Dae-Hwan Ahn; Seong Ui An; Tae Hyeon Noh; Xinkai Sun; Cheol Jun Kim; Juhyuk Park; Younghyun Kim

doi:10.1039/d2na00713d

Demonstration of programmable light intensity of a micro-LED with a Hf-based ferroelectric ITZO TFT for Mura-free displays

Nanoscale Adv. 2022 Dec 12;5(5):1316-1322. doi: 10.1039/d2na00713d. eCollection 2023 Feb 28.

Authors

Affiliations

¹ Department of Photonics and Nanoelectronics, BK 21 FOUR ERICA-ACE Center, Hanyang University Ansan 15588 Korea younghyunkim@hanyang.ac.kr.
² School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST) Daejeon 34141 Korea.
³ Center for Opto-Electronic Materials and Devices, Korea Institute of Science and Technology (KIST) Seoul 02792 Korea.
⁴ Department of Applied Physics, Center for Bionano Intelligence Education and Research, Hanyang University Ansan 15588 Korea.

Abstract

We demonstrate the programmable light intensity of a micro-LED by compensating threshold voltage variability of thin-film transistors (TFTs) by introducing a non-volatile programmable ferroelectric material, HfZrO₂ (HZO) into the gate stack of the TFT. We fabricated an amorphous ITZO TFT, ferroelectric TFTs (FeTFTs), and micro-LEDs and verified the feasibility of our proposed current-driving active matrix circuit. Importantly, we successfully present the programmed multi-level lighting of the micro-LED, utilizing partial polarization switching in the a-ITZO FeTFT. We expect that this approach will be highly promising for the next-generation display technology, replacing complicated threshold voltage compensation circuits with a simple a-ITZO FeTFT.