Insight into pressure effect on optoelectronic, mechanical, and lattice vibrational properties of nanostructured GaxIn1 - xPySbzAs1 - y - z for the solar cells system

E B Elkenany; O A Alfrnwani; M Sallah

doi:10.1038/s41598-023-30681-1

Insight into pressure effect on optoelectronic, mechanical, and lattice vibrational properties of nanostructured Ga_xIn_{1 - x}P_ySb_zAs_{1 - y - z} for the solar cells system

Sci Rep. 2023 Mar 8;13(1):3891. doi: 10.1038/s41598-023-30681-1.

Authors

E B Elkenany¹, O A Alfrnwani², M Sallah^{2

3}

Affiliations

¹ Physics Department, Faculty of Science, Mansoura University, Mansoura, 35516, Egypt. kena@mans.edu.eg.
² Physics Department, Faculty of Science, Mansoura University, Mansoura, 35516, Egypt.
³ Higher Institute of Engineering and Technology, New Damietta, 34517, Egypt.

Abstract

The electronic, optical, and elastic characteristics of the Ga_xIn_{1 - x}P_ySb_zAs_{1 - y - z} alloy lattice matched to the GaSb substrate using a pseudo-potential formalism (EPM) based on the virtual crystal approximation (VCA) are performed. The mechanical features, acoustic velocity, and phonon frequencies of the Ga_xIn_{1 - x}P_ySb_zAs_{1 - y - z}/GaSb system are calculated. The sensitivity of these properties to pressure is considered. Our findings are reasonably consistent with the experimental evidence that is currently available. The studied properties of this alloy under the influence of pressure are a new achievement. Novel device applications would be made possible by the pentanary Ga_xIn_{1 - x}P_ySb_zAs_{1 - y - z} alloy under high pressure.