Improving the intrinsic conductance of selective area grown in-plane InAs nanowires with a GaSb shell

W Khelifi; C Coinon; M Berthe; D Troadec; G Patriarche; X Wallart; B Grandidier; L Desplanque

doi:10.1088/1361-6528/acc810

Improving the intrinsic conductance of selective area grown in-plane InAs nanowires with a GaSb shell

Nanotechnology. 2023 Apr 12;34(26). doi: 10.1088/1361-6528/acc810.

Authors

W Khelifi¹, C Coinon¹, M Berthe¹, D Troadec¹, G Patriarche², X Wallart¹, B Grandidier¹, L Desplanque¹

Affiliations

¹ Univ. Lille, CNRS, Centrale Lille, Univ. Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520 - IEMN, F-59000 Lille, France.
² Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, F-91120, Palaiseau, France.

PMID: 36975178
DOI: 10.1088/1361-6528/acc810

Abstract

The nanoscale intrinsic electrical properties of in-plane InAs nanowires grown by selective area epitaxy are investigated using a process-free method involving a multi-probe scanning tunneling microscope. The resistance of oxide-free InAs nanowires grown on an InP(111)_Bsubstrate and the resistance of InAs/GaSb core-shell nanowires grown on an InP(001) substrate are measured using a collinear four-point probe arrangement in ultrahigh vacuum. They are compared with the resistance of two-dimensional electron gas reference samples measured using the same method and with the Van der Pauw geometry for validation. A significant improvement of the conductance is achieved when the InAs nanowires are fully embedded in GaSb, exhibiting an intrinsic sheet conductance close to the one of the quantum well counterpart.

Keywords: InAs; core–shell nanowire; four-probe STM; molecular beam epitaxy; selective area growth.