This work explores the potential for achieving correlated disorder in electrical circuits by utilizing reactive elements. By establishing a direct correspondence between the tight-binding Hamiltonian and the admittance matrix of the circuit, a novel approach is presented. The localization phenomena within the circuit are investigated through the analysis of the two-port impedance. To introduce correlated disorder, the Aubry-André-Harper (AAH) model is employed. Both one-dimensional and quasi-one-dimensional AAH structures are examined and effectively mapped to their tight-binding counterparts. Notably, transitions from a high-conducting phase to a low-conducting phase are observed in these circuits, highlighting the impact of correlated disorder.
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