Efficient CsPbBr3 Quantum-Dot Light-Emitting Diodes Using Sputtered NiO Films as Hole Injection Layers

Pao-Hsun Huang; Sih-An Chen; Li-Wei Chao; Jia-Xun Xie; Ching-Yu Liao; Zong-Liang Tseng; Sheng-Hui Chen

doi:10.3390/ma16176060

Efficient CsPbBr₃ Quantum-Dot Light-Emitting Diodes Using Sputtered NiO Films as Hole Injection Layers

Materials (Basel). 2023 Sep 4;16(17):6060. doi: 10.3390/ma16176060.

Authors

Pao-Hsun Huang¹, Sih-An Chen², Li-Wei Chao², Jia-Xun Xie^{2

3}, Ching-Yu Liao^{2

3}, Zong-Liang Tseng^{2

3}, Sheng-Hui Chen⁴

Affiliations

¹ School of Ocean Information Engineering, Jimei University, Jimei District, Xiamen 361021, China.
² Organic Electronics Research Center, Ming Chi University of Technology, No. 84, Gungjuan Rd., New Taipei City 24301, Taiwan.
³ Department of Electronic Engineering, Ming Chi University of Technology, No. 84, Gungjuan Rd., New Taipei City 24301, Taiwan.
⁴ Department of Optics and Photonics, National Central University, Taoyuan 320317, Taiwan.

Abstract

Perovskite quantum dots (QDs) have showed excellent optoelectronic properties to extend the application range of novel solid-state lighting, such as perovskite QD based LEDs (QD-LEDs). However, the traditional device structure of perovskite QD-LEDs employed PEDOT:PSS as a hole inject layer (HIL), which impairs stability due to acidic surface characteristics. This study proposes the sputtered NiO films as an HIL to replace acidic PEDOT:PSS. The NiO films with significantly different characteristics were prepared by controlling the sputtering parameters to investigate the devices' performance of NiO-based CsPbBr₃ QD-LEDs. The optimized device showed an excellent performance with maxima luminescence of 20,118 cd/m² and an external quantum efficiency (EQE) up to 3.63%.

Keywords: CsPbBr3 quantum dot; NiO; light-emitting diode; sputter.

Grants and funding

This research was funded by the Ministry of Science and Technology (Taiwan) under contract No. NSTC 111-2221-E-131-031.