Nanoscale Dispersion of Carbon Nanotubes in a Metal Matrix to Boost Thermal and Electrical Conductivity via Facile Ball Milling Techniques

Nanomaterials (Basel). 2023 Oct 23;13(20):2815. doi: 10.3390/nano13202815.

Abstract

Carbon nanotube (CNT)/metal composites have attracted much attention due to their enhanced electrical and thermal performance. How to achieve the scalable fabrication of composites with efficient dispersion of CNTs to boost their performance remains a challenge for their wide realistic applications. Herein, the nanoscale dispersion of CNTs in the Stannum (Sn) matrix to boost thermal and electrical conductivity via facile ball milling techniques was demonstrated. The results revealed that CNTs were tightly attached to metal Sn, resulting in a much lower resistivity than that of bare Sn. The resistivity of Sn with 1 wt.% and 2 wt.% CNTs was 0.087 mΩ·cm and 0.056 mΩ·cm, respectively. The theoretical calculation showed that there was an electronic state near the Fermi level, suggesting its electrical conductivity had been improved to a certain extent. In addition, the thermal conductivity of Sn with 2 wt.% CNTs was 1.255 W·m-1·K-1. Moreover, Young's modulus of the composites with CNTs mass fraction of 10 wt.% had low values (0.933 MPa) under low strain conditions, indicating the composite shows good potential for various applications with different flexible requirements. The good electrical and thermal conductive CNT networks were formed in the metal matrix via facile ball milling techniques. This strategy can provide guidance for designing high-performance metal samples and holds a broad application potential in electronic packaging and other fields.

Keywords: Young’s modulus; ball milling; carbon nanotubes; electrical; metal composite; thermal.

Grants and funding

This research was funded by the Natural Science Foundation of Shanghai (23ZR1443000) and the University–Industry Cooperation Foundation of the Eighth Research Institute of China Aerospace Science and Technology Corporation (USCAST2022-44). The Instrumental Analysis Center of Shanghai Jiao Tong University and the Center for Advanced Electronic Materials and Devices of Shanghai Jiao Tong University for analytical support are also acknowledged.