Size control of InP nanowires by in situ annealing and its application to the formation of InAsP quantum dots

Masahiro Sasaki; Tomoya Akamatsu; Katsuhiro Tomioka; Junichi Motohisa

doi:10.1088/1361-6528/ad2570

Size control of InP nanowires by in situ annealing and its application to the formation of InAsP quantum dots

Nanotechnology. 2024 Feb 20;35(19). doi: 10.1088/1361-6528/ad2570.

Authors

Masahiro Sasaki¹, Tomoya Akamatsu¹, Katsuhiro Tomioka¹, Junichi Motohisa¹

Affiliation

¹ Graduate School of Information Science and Technology and Research Center for Integrated Quantum Electronics, Hokkaido University, North 14, West 9, Sapporo 060-0814, Japan.

PMID: 38306695
DOI: 10.1088/1361-6528/ad2570

Abstract

We carried outin situannealing of InP nanowires (NWs) in a metal-organic vapor phase epitaxial (MOVPE) growth reactor to control and reduce the tip size of InP NWs. InP NWs were grown by selective-area (SA) MOVPE on partially masked (111)A InP substrates, and annealing was successively applied in tertiarybutylphosphine (TBP) ambient. Initially, the InP NWs had a hexagonal cross-section with{112¯}facets vertical to the substrates; they became tapered, and the edges were rounded by annealing. By appropriately selecting the annealing temperature and initial NW diameter, the tip size of the NW was reduced and NWs with a tip size of 20 nm were successfully formed. Subsequently, a thin InAsP layer was grown on the annealed NWs and their photoluminescence was investigated at low temperatures. The characterization results indicated the formation of InAsP quantum dots (QDs) emitting in the telecom band. Our approach is useful for reducing the size of the NWs and for the controlled formation of InAsP QDs embedded in InP NWs in photonic devices compatible with telecom bands.

Keywords: InP; heterostructure; nanowire; quantum dot.