Compact light couplers between III-V devices and Si waveguides are crucial for advancing the scalability of Si photonics. Here, we present a compact light coupling strategy for lateral III-V membrane lasers and PDs directly grown on SOI platforms. Benefiting from the coplanar configuration of epitaxial III-V membranes and Si device layer, we designed novel, to our knowledge, butt couplers to achieve both small footprint and high efficiency coupling. We employed sub-wavelength grating structures to gradually bridge the effective refractive index between the III-V membranes and Si waveguide and obtained a coupling loss of less than 0.5 dB across the entire telecom band in a length of less than 10 μm. Our work here offers a fresh perspective for future densely integrated Si photonics.