Memristive structures are among the most promising options to be components of neuromorphic devices. However, the formation of HfO2-based devices in crossbar arrays requires considerable time since electroforming is a single stochastic operation. In this study, we investigate how Ar+ plasma immersion ion implantation (PI) affects the Pt/HfO2 (4 nm)/HfOXNY (3 nm)/TaN electroforming voltage. The advantage of PI is the simultaneous and uniform processing of the entire wafer. It is thought that Ar+ implantation causes defects to the oxide matrix, with the majority of the oxygen anions being shifted in the direction of the TaN electrode. We demonstrate that it is feasible to reduce the electroforming voltages from 7.1 V to values less than 3 V by carefully selecting the implantation energy. A considerable decrease in the electroforming voltage was achievable at an implantation energy that provided the dispersion of recoils over the whole thickness of the oxide without significantly affecting the HfOXNY/TaN interface. At the same time, Ar+ PI at higher and lower energies did not produce the same significant decrease in the electroforming voltage. It is also possible to obtain self-compliance of current in the structure during electroforming after PI with energy less than 2 keV.
Keywords: argon ions; hafnium oxide; ion impact; nanostructured materials; oxide materials; vacancy formation.