A high-power diode laser (808 nm) is a potentially cost-effective, effective, and safe option for lingual frenectomies. An eight-year-old female patient with mild difficulty in articulating some phonemes, Angle class III malocclusion with maxillary atresia, and bilateral anterior and posterior crossbite was indicated for diode laser frenectomy. The procedure was performed with the following parameters: λ = 808 nm (±20 nm), 1.5 W, in continuous mode. Energy delivery utilized a 300 μm-diameter quartz fiber maintained in contact with the irradiated tissue. A four-year follow-up revealed the preservation of tongue anatomy functionality, restored in conjunction with speech therapy. A high-power diode laser (808 nm) stands out as a prioritized alternative among available technologies for lingual frenectomy, particularly when administered by adequately trained professionals.
Keywords: ankyloglossia; frenotomy; lasers; lingual frenum; semiconductor laser.
Copyright © 2024, Santos-Rodrigues et al.