Artificially aligned or positioned functional materials are essential building blocks for modern devices and nanoelectronics. Since the emergence of 2D materials, the vertical stacking/integration of exotic materials has garnered increasing attention. However, controlling homostructures, e.g. identical materials conjoined with varying crystalline orientations, magnetism, or strain states, along the lateral direction remains challenging. Leveraging on the freestanding thin film growth techniques, the concept of twisted lateral homostructures has been introduced, enabling precise control over the lateral alignment of crystalline directions. Here, using La0.7Sr0.3MnO3, a classic strongly correlated material, the precise manipulation of epitaxial strain alongside the homojunction is demonstrated. This leads to a precisely controllable lateral homostructure composed of polymorphic ferromagnetic and antiferromagnetic La0.7Sr0.3MnO3 regions. It is further identified that the interactions between the ferromagnetic and antiferromagnetic regions of La0.7Sr0.3MnO3 lead to unconventional ultrafast spin dynamics and magnetotransport behavior. The results provide a promising platform for developing novel emergent phenomena and functionalities in the twisted lateral homostructures.
Keywords: antiferromagnetism; ferromagnetism; homostructure; lanthanum strontium manganite (LSMO); magnetoresistance; metal‐insulator transition; strain engineering; weave epitaxy.
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