Two-dimensional (2D) transition metal dichalcogenides, exemplified by molybdenum disulfide (MoS2), have shown exceptional potential for data-centered, energy-efficient electronic applications due to their unique electrical, optoelectronic, and mechanical properties. However, challenges such as the controllable synthesis of high-quality, large-area 2D MoS2films and the mitigation of contamination during growth remain significant barriers to their integration into advanced technologies. Here, photoresist S1813 is innovatively utilized as a contamination-free growth promoter, enabling the clean and scalable synthesis of high quality 2D MoS2on SiO2/Si substrate with desirable grain structures via chemical vapor deposition. By optimizing the reactant concentration and S/Mo ratio, enhanced MoS2growth with improved quality is achieved, as evidenced by the increased MoS2flake size and coverage, alongside a strong photoluminescence A exciton peak at 1.84 eV. This approach facilitates the clean and selective growth of high-quality 2D MoS2, establishing a robust pathway for the practical implementation of 2D MoS2in next-generation electronic devices.
Keywords: 2D materials; chemical vapor deposition; molybdenum disulfide; transition metal dichalcogenides.
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