Self-powered photodetector based on CuInP2S6/MoSe2heterostructure

Canhui Pan; Weike Wang; Jiaxin Cheng; Guohao Yuan; Xue Chen; Jianan Li; YanLing Yin; Yuehua Peng; Weichang Zhou; Dongsheng Tang

doi:10.1088/1361-648X/ae3c4d

Self-powered photodetector based on CuInP₂S₆/MoSe₂heterostructure

J Phys Condens Matter. 2026 Feb 4;38(5). doi: 10.1088/1361-648X/ae3c4d.

Authors

Canhui Pan¹, Weike Wang¹, Jiaxin Cheng^{1

2}, Guohao Yuan¹, Xue Chen¹, Jianan Li¹, YanLing Yin¹, Yuehua Peng¹, Weichang Zhou¹, Dongsheng Tang¹

Affiliations

¹ Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education Institute of Interdisciplinary Studies Department of Physics and Hunan Research Center of the Basic Discipline for Quantum Effects and Quantum Technologies, Hunan Normal University, Changsha 410081, People's Republic of China.
² School of Physics and Chemistry, Hunan First Normal University, Changsha 410205, People's Republic of China.

PMID: 41570384
DOI: 10.1088/1361-648X/ae3c4d

Abstract

The construction of two-dimensiona heterostructures offers a novel strategy for modulating optoelectronic devices. In this work, we fabricated CuInP₂S₆(CIPS)/MoSe₂ferroelectric heterostructures by scotch-tape method and investigated its optoelectronic properties. The detector shows a gate voltage tunable photoelectric response, the responsivity is improved by approximately 3902%, achieving a maximum of 5.57 A W^-1and the detectivity by 1785%, reaching 6.66 × 10⁸Jones. Interestingly, upon the application of a gate voltage, the polarized electric field arising from ferroelectricity of CIPS enables the device to operate in a self-powered mode. Remarkably, the devices attained a high responsivity of 170.86 mA W^-1and a detectivity of 2.66 × 10⁹Jones, respectively. Our research demonstrates that ferroelectric heterojunctions exhibit significant potential for application in self-powered photodetectors.

Keywords: CuInP2S6; MoSe2; ferroelectric material; photodetector.