The integration of complementary metal-oxide-semiconductor (CMOS) and micro-electromechanical systems (MEMSs) technologies for miniaturized biosensor fabrication enables unprecedented spatiotemporal resolution in monitoring the bioelectrical activity of the nervous system. Wafer-level CMOS technology incurs high costs, but multi-project wafer (MPW) runs mitigate this by allowing multiple users to share a single wafer. Still, monolithic CMOS biosensors require specialized surface materials or device geometries incompatible with standard CMOS processes. Performing MEMS post-processing on the few square millimeters available in MPW dies remains a significant challenge. In this paper, we present a MEMS post-processing workflow tailored for CMOS dies that supports both surface material modification and layout shaping for intracortical biosensing applications. To address lithographic limitations on small substrates, we optimized spray-coating photolithography methods that suppress edge effects and enable reliable patterning and lift-off of diverse materials. We fabricated a needle-like, 512-channel simultaneous neural recording active pixel sensor (SiNAPS) technology based neural probe designed for integration with optical fibers for optogenetic studies. To mitigate photoelectric effects induced by light stimulation, we incorporated a photoelectric shield through simple modifications to the photolithography mask. Optical bench testing demonstrated >96% light-shielding effectiveness at 3 mW of light power applied directly to the probe electrodes. In vivo experiments confirmed the probe's capability for high-resolution electrophysiological measurements.
Keywords: SiNAPS-base neural probe; artifact-free; biosensors prototyping; complementary metal–oxide–semiconductor and micro-electromechanical systems technologies (CMOS–MEMS technology); high-density electrophysiology; multimodal recordings; photoelectric shield.