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Influence of Oxygen Partial Pressure on Radio Frequency Magnetron Sputtered Amorphous InZnSnO Thin Film Transistors.
J Nanosci Nanotechnol. 2020 Jan 1;20(1):252-256. doi: 10.1166/jnn.2020.17222.
J Nanosci Nanotechnol. 2020.
PMID: 31383163
Effect of the Active Channel Thickness Variation in Amorphous In-Zn-Sn-O Thin Film Transistor.
Lestari AD, Noviyana I, Putri M, Heo YW, Lee HY.
Lestari AD, et al.
J Nanosci Nanotechnol. 2019 Mar 1;19(3):1686-1689. doi: 10.1166/jnn.2019.16251.
J Nanosci Nanotechnol. 2019.
PMID: 30469246
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High Mobility Thin Film Transistors Based on Amorphous Indium Zinc Tin Oxide.
Noviyana I, Lestari AD, Putri M, Won MS, Bae JS, Heo YW, Lee HY.
Noviyana I, et al. Among authors: lestari ad.
Materials (Basel). 2017 Jun 26;10(7):702. doi: 10.3390/ma10070702.
Materials (Basel). 2017.
PMID: 28773058
Free PMC article.
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