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Table representation of search results timeline featuring number of search results per year.

Year Number of Results
2010 5
2011 7
2012 6
2013 8
2014 11
2015 11
2016 18
2017 15
2018 16
2019 13
2020 8
2021 0
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111 results
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Page 1
Fluorite-structure antiferroelectrics.
Park MH, Hwang CS. Park MH, et al. Among authors: hwang cs. Rep Prog Phys. 2019 Dec;82(12):124502. doi: 10.1088/1361-6633/ab49d6. Epub 2019 Oct 1. Rep Prog Phys. 2019. PMID: 31574497
Nociceptive Memristor.
Kim Y, Kwon YJ, Kwon DE, Yoon KJ, Yoon JH, Yoo S, Kim HJ, Park TH, Han JW, Kim KM, Hwang CS. Kim Y, et al. Among authors: hwang cs. Adv Mater. 2018 Feb;30(8). doi: 10.1002/adma.201704320. Epub 2018 Jan 10. Adv Mater. 2018. PMID: 29318678
Modeling of Negative Capacitance in Ferroelectric Thin Films.
Park HW, Roh J, Lee YB, Hwang CS. Park HW, et al. Among authors: hwang cs. Adv Mater. 2019 Aug;31(32):e1805266. doi: 10.1002/adma.201805266. Epub 2019 Jun 5. Adv Mater. 2019. PMID: 31165533 Review.
Nonvolatile Memory Materials for Neuromorphic Intelligent Machines.
Jeong DS, Hwang CS. Jeong DS, et al. Among authors: hwang cs. Adv Mater. 2018 Oct;30(42):e1704729. doi: 10.1002/adma.201704729. Epub 2018 Apr 18. Adv Mater. 2018. PMID: 29667255 Review.
Electroforming-Free Bipolar Resistive Switching in GeSe Thin Films with a Ti-Containing Electrode.
Kim W, Yoo C, Park ES, Ha M, Jeon JW, Kim GS, Woo KS, Lee YK, Hwang CS. Kim W, et al. Among authors: hwang cs. ACS Appl Mater Interfaces. 2019 Oct 23;11(42):38910-38920. doi: 10.1021/acsami.9b10891. Epub 2019 Oct 9. ACS Appl Mater Interfaces. 2019. PMID: 31550128
An artificial nociceptor based on a diffusive memristor.
Yoon JH, Wang Z, Kim KM, Wu H, Ravichandran V, Xia Q, Hwang CS, Yang JJ. Yoon JH, et al. Among authors: hwang cs. Nat Commun. 2018 Jan 29;9(1):417. doi: 10.1038/s41467-017-02572-3. Nat Commun. 2018. PMID: 29379008 Free PMC article.
Ferroelectric switching in bilayer 3R MoS2 via interlayer shear mode driven by nonlinear phononics.
Park J, Yeu IW, Han G, Hwang CS, Choi JH. Park J, et al. Among authors: hwang cs. Sci Rep. 2019 Oct 17;9(1):14919. doi: 10.1038/s41598-019-50293-y. Sci Rep. 2019. PMID: 31624270 Free PMC article.
Understanding ferroelectric phase formation in doped HfO2 thin films based on classical nucleation theory.
Park MH, Lee YH, Hwang CS. Park MH, et al. Among authors: hwang cs. Nanoscale. 2019 Nov 7;11(41):19477-19487. doi: 10.1039/c9nr05768d. Epub 2019 Sep 24. Nanoscale. 2019. PMID: 31549704
Ferroelectric domain wall memory with embedded selector realized in LiNbO3 single crystals integrated on Si wafers.
Jiang AQ, Geng WP, Lv P, Hong JW, Jiang J, Wang C, Chai XJ, Lian JW, Zhang Y, Huang R, Zhang DW, Scott JF, Hwang CS. Jiang AQ, et al. Among authors: hwang cs. Nat Mater. 2020 Nov;19(11):1188-1194. doi: 10.1038/s41563-020-0702-z. Epub 2020 Jun 15. Nat Mater. 2020. PMID: 32541933
A Comparative Study on the Ferroelectric Performances in Atomic Layer Deposited Hf0.5Zr0.5O2 Thin Films Using Tetrakis(ethylmethylamino) and Tetrakis(dimethylamino) Precursors.
Kim BS, Hyun SD, Moon T, Do Kim K, Lee YH, Park HW, Lee YB, Roh J, Kim BY, Kim HH, Park MH, Hwang CS. Kim BS, et al. Among authors: hwang cs. Nanoscale Res Lett. 2020 Apr 7;15(1):72. doi: 10.1186/s11671-020-03301-4. Nanoscale Res Lett. 2020. PMID: 32266598 Free PMC article.
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