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Table representation of search results timeline featuring number of search results per year.

Year Number of Results
2005 2
2007 2
2009 2
2010 2
2013 2
2014 5
2015 3
2016 1
2017 6
2018 4
2019 2
2020 2
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33 results
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Page 1
High-Mobility InSe Transistors: The Role of Surface Oxides.
Ho PH, Chang YR, Chu YC, Li MK, Tsai CA, Wang WH, Ho CH, Chen CW, Chiu PW. Ho PH, et al. Among authors: Ho CH. ACS Nano. 2017 Jul 25;11(7):7362-7370. doi: 10.1021/acsnano.7b03531. Epub 2017 Jul 5. ACS Nano. 2017. PMID: 28661128
Integrated digital inverters based on two-dimensional anisotropic ReS2 field-effect transistors.
Liu E, Fu Y, Wang Y, Feng Y, Liu H, Wan X, Zhou W, Wang B, Shao L, Ho CH, Huang YS, Cao Z, Wang L, Li A, Zeng J, Song F, Wang X, Shi Y, Yuan H, Hwang HY, Cui Y, Miao F, Xing D. Liu E, et al. Among authors: Ho CH. Nat Commun. 2015 May 7;6:6991. doi: 10.1038/ncomms7991. Nat Commun. 2015. PMID: 25947630 Free PMC article.
Ultraefficient Ultraviolet and Visible Light Sensing and Ohmic Contacts in High-Mobility InSe Nanoflake Photodetectors Fabricated by the Focused Ion Beam Technique.
Yang HW, Hsieh HF, Chen RS, Ho CH, Lee KY, Chao LC. Yang HW, et al. Among authors: Ho CH. ACS Appl Mater Interfaces. 2018 Feb 14;10(6):5740-5749. doi: 10.1021/acsami.7b15106. Epub 2018 Jan 30. ACS Appl Mater Interfaces. 2018. PMID: 29381044
High-Mobility InSe Transistors: The Nature of Charge Transport.
Tsai TH, Yang FS, Ho PH, Liang ZY, Lien CH, Ho CH, Lin YF, Chiu PW. Tsai TH, et al. Among authors: Ho PH, Ho CH. ACS Appl Mater Interfaces. 2019 Oct 2;11(39):35969-35976. doi: 10.1021/acsami.9b11052. Epub 2019 Sep 18. ACS Appl Mater Interfaces. 2019. PMID: 31532619
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