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Table representation of search results timeline featuring number of search results per year.

Year Number of Results
2006 2
2009 1
2012 1
2013 8
2014 3
2015 10
2016 6
2017 16
2018 17
2019 14
2020 17
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89 results
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Page 1
Recent Advances in β-Ga2O3-Metal Contacts.
Huan YW, Sun SM, Gu CJ, Liu WJ, Ding SJ, Yu HY, Xia CT, Zhang DW. Huan YW, et al. Among authors: Zhang DW. Nanoscale Res Lett. 2018 Aug 22;13(1):246. doi: 10.1186/s11671-018-2667-2. Nanoscale Res Lett. 2018. PMID: 30136254 Free PMC article. Review.
High-Performance Wafer-Scale MoS2 Transistors toward Practical Application.
Xu H, Zhang H, Guo Z, Shan Y, Wu S, Wang J, Hu W, Liu H, Sun Z, Luo C, Wu X, Xu Z, Zhang DW, Bao W, Zhou P. Xu H, et al. Among authors: Zhang H, Zhang DW. Small. 2018 Nov;14(48):e1803465. doi: 10.1002/smll.201803465. Epub 2018 Oct 16. Small. 2018. PMID: 30328296
A Photoelectric-Stimulated MoS2 Transistor for Neuromorphic Engineering.
Wang S, Hou X, Liu L, Li J, Shan Y, Wu S, Zhang DW, Zhou P. Wang S, et al. Among authors: Zhang DW. Research (Wash D C). 2019 Nov 11;2019:1618798. doi: 10.34133/2019/1618798. eCollection 2019. Research (Wash D C). 2019. PMID: 31922128 Free PMC article.
A two-dimensional semiconductor transistor with boosted gate control and sensing ability.
Xu J, Chen L, Dai YW, Cao Q, Sun QQ, Ding SJ, Zhu H, Zhang DW. Xu J, et al. Among authors: Zhang DW. Sci Adv. 2017 May 19;3(5):e1602246. doi: 10.1126/sciadv.1602246. eCollection 2017 May. Sci Adv. 2017. PMID: 28560330 Free PMC article.
Investigation of Energy Band at Atomic-Layer-Deposited ZnO/β-Ga2O3 ([Formula: see text]) Heterojunctions.
Sun SM, Liu WJ, Xiao YF, Huan YW, Liu H, Ding SJ, Zhang DW. Sun SM, et al. Among authors: Zhang DW. Nanoscale Res Lett. 2018 Dec 24;13(1):412. doi: 10.1186/s11671-018-2832-7. Nanoscale Res Lett. 2018. PMID: 30584649 Free PMC article.
Atomic-Layer-Deposition of Indium Oxide Nano-films for Thin-Film Transistors.
Ma Q, Zheng HM, Shao Y, Zhu B, Liu WJ, Ding SJ, Zhang DW. Ma Q, et al. Among authors: Zhang DW. Nanoscale Res Lett. 2018 Jan 9;13(1):4. doi: 10.1186/s11671-017-2414-0. Nanoscale Res Lett. 2018. PMID: 29318402 Free PMC article.
In Situ Analysis of Oxygen Vacancies and Band Alignment in HfO2/TiN Structure for CMOS Applications.
Xu DP, Yu LJ, Chen XD, Chen L, Sun QQ, Zhu H, Lu HL, Zhou P, Ding SJ, Zhang DW. Xu DP, et al. Among authors: Zhang DW. Nanoscale Res Lett. 2017 Dec;12(1):311. doi: 10.1186/s11671-017-2068-y. Epub 2017 Apr 27. Nanoscale Res Lett. 2017. PMID: 28454477 Free PMC article.
High Performance Amplifier Element Realization via MoS2/GaTe Heterostructures.
Yan X, Zhang DW, Liu C, Bao W, Wang S, Ding S, Zheng G, Zhou P. Yan X, et al. Among authors: Zhang DW. Adv Sci (Weinh). 2018 Jan 15;5(4):1700830. doi: 10.1002/advs.201700830. eCollection 2018 Apr. Adv Sci (Weinh). 2018. PMID: 29721428 Free PMC article.
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