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Trap Exploration in Amorphous Boron-Doped ZnO Films.
Materials (Basel). 2015 Aug 31;8(9):5795-5805. doi: 10.3390/ma8095276.
Materials (Basel). 2015.
PMID: 28793534
Free PMC article.
Conduction Mechanisms in Resistance Switching Memory Devices Using Transparent Boron Doped Zinc Oxide Films.
Chiu FC.
Chiu FC.
Materials (Basel). 2014 Nov 12;7(11):7339-7348. doi: 10.3390/ma7117339.
Materials (Basel). 2014.
PMID: 28788250
Free PMC article.
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Reliability characteristics and conduction mechanisms in resistive switching memory devices using ZnO thin films.
Chiu FC, Li PW, Chang WY.
Chiu FC, et al.
Nanoscale Res Lett. 2012 Mar 8;7(1):178. doi: 10.1186/1556-276X-7-178.
Nanoscale Res Lett. 2012.
PMID: 22401297
Free PMC article.
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