Skip to main page content
Access keys NCBI Homepage MyNCBI Homepage Main Content Main Navigation

Search Page

My NCBI Filters
Results by year

Table representation of search results timeline featuring number of search results per year.

Year Number of Results
2013 1
2014 3
2015 3
2016 1
2018 2
2019 6
2020 8
Text availability
Article attribute
Article type
Publication date

Search Results

24 results
Results by year
Filters applied: . Clear all
Page 1
Analysis of Electrical Characteristics of InAlGaN/GaN-Based High Electron Mobility Transistors with AlGaN Back Barriers.
Jung JH, Yoon YJ, Cho MS, Kim BG, Jang WD, Kang IM. Jung JH, et al. Among authors: kang im. J Nanosci Nanotechnol. 2019 Oct 1;19(10):6008-6015. doi: 10.1166/jnn.2019.17011. J Nanosci Nanotechnol. 2019. PMID: 31026900
Design and Optimization of Germanium-Based Gate-Metal-Core Vertical Nanowire Tunnel FET.
Jang WD, Yoon YJ, Cho MS, Jung JH, Lee SH, Jang J, Bae JH, Kang IM. Jang WD, et al. Among authors: kang im. Micromachines (Basel). 2019 Oct 31;10(11):749. doi: 10.3390/mi10110749. Micromachines (Basel). 2019. PMID: 31683726 Free PMC article.
Capacitorless One-Transistor Dynamic Random-Access Memory Based on Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor with Si/SiGe Heterojunction and Underlap Structure for Improvement of Sensing Margin and Retention Time.
Yoon YJ, Cho MS, Kim BG, Seo JH, Kang IM. Yoon YJ, et al. Among authors: kang im. J Nanosci Nanotechnol. 2019 Oct 1;19(10):6023-6030. doi: 10.1166/jnn.2019.17007. J Nanosci Nanotechnol. 2019. PMID: 31026902
Design Optimization of InGaAs/GaAsSb-Based P-Type Gate-All-Around Arch-Shaped Tunneling Field-Effect Transistor.
Kim BG, Seo JH, Yoon YJ, Cho MS, Kang IM. Kim BG, et al. Among authors: kang im. J Nanosci Nanotechnol. 2019 Oct 1;19(10):6762-6766. doi: 10.1166/jnn.2019.17103. J Nanosci Nanotechnol. 2019. PMID: 31027025
Design Optimization and Analysis of InGaAs/InAs/InGaAs Heterojunction-Based Electron Hole Bilayer Tunneling FETs.
Seo JH, Yoon YJ, Cho S, Kang IM, Lee JH. Seo JH, et al. Among authors: kang im. J Nanosci Nanotechnol. 2019 Oct 1;19(10):6070-6076. doi: 10.1166/jnn.2019.17021. J Nanosci Nanotechnol. 2019. PMID: 31026910
Simulation for Electrical Performances of the Capacitorless Dynamic Random Access Memory Based on Junctionless FinFETs.
Cho MS, Yoon YJ, Kim BG, Jung JH, Jang WD, Lee JH, Kang IM. Cho MS, et al. Among authors: kang im. J Nanosci Nanotechnol. 2019 Oct 1;19(10):6755-6761. doi: 10.1166/jnn.2019.17116. J Nanosci Nanotechnol. 2019. PMID: 31027024
Simulation of One-Transistor Dynamic Random-Access Memory Based on Symmetric Double-Gate Si Junctionless Transistor.
Kim BG, Seo JH, Yoon YJ, Cho MS, Yu E, Lee JH, Cho S, Kang IM. Kim BG, et al. Among authors: kang im. J Nanosci Nanotechnol. 2018 Sep 1;18(9):6593-6597. doi: 10.1166/jnn.2018.15707. J Nanosci Nanotechnol. 2018. PMID: 29677840
Recessed-Gate GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistor Using a Dual Gate-Insulator Employing TiO₂/SiN.
Jung JH, Cho MS, Jang WD, Lee SH, Jang J, Bae JH, Kang IM. Jung JH, et al. Among authors: kang im. J Nanosci Nanotechnol. 2020 Aug 1;20(8):4678-4683. doi: 10.1166/jnn.2020.17809. J Nanosci Nanotechnol. 2020. PMID: 32126640
Charge Based Current-Voltage Model for the Silicon on Insulator Junctionless Field-Effect Transistor.
Jeong Y, Kang IM, Cho S, Park J, Shin H. Jeong Y, et al. Among authors: kang im. J Nanosci Nanotechnol. 2020 Aug 1;20(8):4920-4925. doi: 10.1166/jnn.2020.17795. J Nanosci Nanotechnol. 2020. PMID: 32126675
Effect of High-Speed Blade Coating on Electrical Characteristics in Polymer Based Transistors.
Park JI, Jeong HS, Vincent P, Park J, Kim DK, Jang J, Kang IM, Kim H, Kim YH, Lang P, Bae JH. Park JI, et al. Among authors: kang im. J Nanosci Nanotechnol. 2020 Sep 1;20(9):5486-5490. doi: 10.1166/jnn.2020.17615. J Nanosci Nanotechnol. 2020. PMID: 32331122
24 results
You have reached the last page of results. A maximum of 10,000 results are available.
Jump to page
Feedback