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2020 2
2021 2
2022 2
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Control of the Mechanical Adhesion of III-V Materials Grown on Layered h-BN.
Vuong P, Sundaram S, Mballo A, Patriarche G, Leone S, Benkhelifa F, Karrakchou S, Moudakir T, Gautier S, Voss PL, Salvestrini JP, Ougazzaden A. Vuong P, et al. Among authors: salvestrini jp. ACS Appl Mater Interfaces. 2020 Dec 9;12(49):55460-55466. doi: 10.1021/acsami.0c16850. Epub 2020 Nov 25. ACS Appl Mater Interfaces. 2020. PMID: 33237738
Natural Boron and 10B-Enriched Hexagonal Boron Nitride for High-Sensitivity Self-Biased Metal-Semiconductor-Metal Neutron Detectors.
Mballo A, Ahaitouf A, Sundaram S, Srivastava A, Ottapilakkal V, Gujrati R, Vuong P, Karrakchou S, Kumar M, Li X, Halfaya Y, Gautier S, Voss PL, Salvestrini JP, Ougazzaden A. Mballo A, et al. Among authors: salvestrini jp. ACS Omega. 2021 Dec 28;7(1):804-809. doi: 10.1021/acsomega.1c05458. eCollection 2022 Jan 11. ACS Omega. 2021. PMID: 35036747 Free PMC article.
Effectiveness of selective area growth using van der Waals h-BN layer for crack-free transfer of large-size III-N devices onto arbitrary substrates.
Karrakchou S, Sundaram S, Ayari T, Mballo A, Vuong P, Srivastava A, Gujrati R, Ahaitouf A, Patriarche G, Leichlé T, Gautier S, Moudakir T, Voss PL, Salvestrini JP, Ougazzaden A. Karrakchou S, et al. Among authors: salvestrini jp. Sci Rep. 2020 Dec 10;10(1):21709. doi: 10.1038/s41598-020-77681-z. Sci Rep. 2020. PMID: 33303773 Free PMC article.
Nanoselective area growth of defect-free thick indium-rich InGaN nanostructures on sacrificial ZnO templates.
Puybaret R, Rogers DJ, Gmili YE, Sundaram S, Jordan MB, Li X, Patriarche G, Teherani FH, Sandana EV, Bove P, Voss PL, McClintock R, Razeghi M, Ferguson I, Salvestrini JP, Ougazzaden A. Puybaret R, et al. Among authors: salvestrini jp. Nanotechnology. 2017 May 12;28(19):195304. doi: 10.1088/1361-6528/aa6a43. Epub 2017 Mar 30. Nanotechnology. 2017. PMID: 28358724
11 results