Kai-Huang Chen - Search Results

Year	Number of Results
2007	1
2013	2
2014	1
2016	2
2017	3
2018	1
2022	0

1

Bipolar Switching Properties of Neodymium Oxide RRAM Devices Using by a Low Temperature Improvement Method.

Chen KH, Kao MC, Huang SJ, Li JZ. Chen KH, et al. Materials (Basel). 2017 Dec 12;10(12):1415. doi: 10.3390/ma10121415. Materials (Basel). 2017. PMID: 29231867 Free PMC article.

2

Illumination Effect on Bipolar Switching Properties of Gd:SiO2 RRAM Devices Using Transparent Indium Tin Oxide Electrode.

Chen KH, Chang KC, Chang TC, Tsai TM, Liang SP, Young TF, Syu YE, Sze SM. Chen KH, et al. Nanoscale Res Lett. 2016 Dec;11(1):224. doi: 10.1186/s11671-016-1431-8. Epub 2016 Apr 27. Nanoscale Res Lett. 2016. PMID: 27117634 Free PMC article.

3

Dielectric, Piezoelectric, and Vibration Properties of the LiF-Doped (Ba_0.95Ca_0.05)(Ti_0.93Sn_0.07)O₃ Lead-Free Piezoceramic Sheets.

Cheng CM, Chen KH, Lee DH, Jong FC, Chen ML, Chang JK. Cheng CM, et al. Among authors: chen kh. Materials (Basel). 2018 Jan 24;11(2):182. doi: 10.3390/ma11020182. Materials (Basel). 2018. PMID: 29364832 Free PMC article.

4

Structural, Electrical, Magnetic and Resistive Switching Properties of the Multiferroic/Ferroelectric Bilayer Thin Films.

Kao MC, Chen HZ, Young SL, Chen KH, Chiang JL, Shi JB. Kao MC, et al. Among authors: chen kh. Materials (Basel). 2017 Nov 20;10(11):1327. doi: 10.3390/ma10111327. Materials (Basel). 2017. PMID: 29156636 Free PMC article.

5

Schottky Emission Distance and Barrier Height Properties of Bipolar Switching Gd:SiOx RRAM Devices under Different Oxygen Concentration Environments.

Chen KH, Tsai TM, Cheng CM, Huang SJ, Chang KC, Liang SP, Young TF. Chen KH, et al. Materials (Basel). 2017 Dec 28;11(1):43. doi: 10.3390/ma11010043. Materials (Basel). 2017. PMID: 29283368 Free PMC article.

6

Improvement of Bipolar Switching Properties of Gd:SiOx RRAM Devices on Indium Tin Oxide Electrode by Low-Temperature Supercritical CO2 Treatment.

Chen KH, Chang KC, Chang TC, Tsai TM, Liang SP, Young TF, Syu YE, Sze SM. Chen KH, et al. Nanoscale Res Lett. 2016 Dec;11(1):52. doi: 10.1186/s11671-016-1272-5. Epub 2016 Feb 1. Nanoscale Res Lett. 2016. PMID: 26831690 Free PMC article.

7

Hydrogen induced redox mechanism in amorphous carbon resistive random access memory.

Chen YJ, Chen HL, Young TF, Chang TC, Tsai TM, Chang KC, Zhang R, Chen KH, Lou JC, Chu TJ, Chen JH, Bao DH, Sze SM. Chen YJ, et al. Among authors: chen kh. Nanoscale Res Lett. 2014 Jan 29;9(1):52. doi: 10.1186/1556-276X-9-52. Nanoscale Res Lett. 2014. PMID: 24475979 Free PMC article.

8

High performance of graphene oxide-doped silicon oxide-based resistance random access memory.

Zhang R, Chang KC, Chang TC, Tsai TM, Chen KH, Lou JC, Chen JH, Young TF, Shih CC, Yang YL, Pan YC, Chu TJ, Huang SY, Pan CH, Su YT, Syu YE, Sze SM. Zhang R, et al. Among authors: chen kh. Nanoscale Res Lett. 2013 Nov 21;8(1):497. doi: 10.1186/1556-276X-8-497. Nanoscale Res Lett. 2013. PMID: 24261454 Free PMC article.

9

Space electric field concentrated effect for Zr:SiO2 RRAM devices using porous SiO2 buffer layer.

Chang KC, Huang JW, Chang TC, Tsai TM, Chen KH, Young TF, Chen JH, Zhang R, Lou JC, Huang SY, Pan YC, Huang HC, Syu YE, Gan DS, Bao DH, Sze SM. Chang KC, et al. Among authors: chen kh. Nanoscale Res Lett. 2013 Dec 11;8(1):523. doi: 10.1186/1556-276X-8-523. Nanoscale Res Lett. 2013. PMID: 24330524 Free PMC article.

10

Fabrication of one-transistor-capacitor structure of nonvolatile TFT ferroelectric RAM devices using Ba(Zr0.1Ti0.9)O3 gated oxide film.

Yang CF, Chen KH, Chen YC, Chang TC. Yang CF, et al. Among authors: chen kh. IEEE Trans Ultrason Ferroelectr Freq Control. 2007 Sep;54(9):1726-30. doi: 10.1109/tuffc.2007.457. IEEE Trans Ultrason Ferroelectr Freq Control. 2007. PMID: 17941379

Save citations to file

Email citations

Send citations to clipboard

Add to Collections

Add to My Bibliography

Create a file for external citation management software

Your saved search

Your RSS Feed

Search Page

Search Results