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Did you mean lanxi Cheng (6 results)?
Investigation of the Physical Properties of Plasma Enhanced Atomic Layer Deposited Silicon Nitride as Etch Stopper.
Kim HS, Meng X, Kim SJ, Lucero AT, Cheng L, Byun YC, Lee JS, Hwang SM, Kondusamy ALN, Wallace RM, Goodman G, Wan AS, Telgenhoff M, Hwang BK, Kim J. Kim HS, et al. Among authors: Cheng L. ACS Appl Mater Interfaces. 2018 Dec 26;10(51):44825-44833. doi: 10.1021/acsami.8b15291. Epub 2018 Dec 11. ACS Appl Mater Interfaces. 2018. PMID: 30485061
High-Mobility Helical Tellurium Field-Effect Transistors Enabled by Transfer-Free, Low-Temperature Direct Growth.
Zhou G, Addou R, Wang Q, Honari S, Cormier CR, Cheng L, Yue R, Smyth CM, Laturia A, Kim J, Vandenberghe WG, Kim MJ, Wallace RM, Hinkle CL. Zhou G, et al. Among authors: Cheng L. Adv Mater. 2018 Jul 18:e1803109. doi: 10.1002/adma.201803109. Online ahead of print. Adv Mater. 2018. PMID: 30022534
Partially Fluorinated Graphene: Structural and Electrical Characterization.
Cheng L, Jandhyala S, Mordi G, Lucero AT, Huang J, Azcatl A, Addou R, Wallace RM, Colombo L, Kim J. Cheng L, et al. ACS Appl Mater Interfaces. 2016 Feb;8(7):5002-8. doi: 10.1021/acsami.5b11701. Epub 2016 Feb 10. ACS Appl Mater Interfaces. 2016. PMID: 26820099
Remote Plasma Oxidation and Atomic Layer Etching of MoS2.
Zhu H, Qin X, Cheng L, Azcatl A, Kim J, Wallace RM. Zhu H, et al. Among authors: Cheng L. ACS Appl Mater Interfaces. 2016 Jul 27;8(29):19119-26. doi: 10.1021/acsami.6b04719. Epub 2016 Jul 14. ACS Appl Mater Interfaces. 2016. PMID: 27386734
Defects and Surface Structural Stability of MoTe2 Under Vacuum Annealing.
Zhu H, Wang Q, Cheng L, Addou R, Kim J, Kim MJ, Wallace RM. Zhu H, et al. Among authors: Cheng L. ACS Nano. 2017 Nov 28;11(11):11005-11014. doi: 10.1021/acsnano.7b04984. Epub 2017 Nov 14. ACS Nano. 2017. PMID: 29116754
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