Skip to main page content
Access keys NCBI Homepage MyNCBI Homepage Main Content Main Navigation

Search Page

My NCBI Filters
Text availability
Article attribute
Article type
Publication date

Search Results

2 results
Filters applied: . Clear all
Page 1
Formation polarity dependent improved resistive switching memory characteristics using nanoscale (1.3 nm) core-shell IrOx nano-dots.
Banerjee W, Maikap S, Lai CS, Chen YY, Tien TC, Lee HY, Chen WS, Chen FT, Kao MJ, Tsai MJ, Yang JR. Banerjee W, et al. Among authors: Kao MJ. Nanoscale Res Lett. 2012 Mar 22;7(1):194. doi: 10.1186/1556-276X-7-194. Nanoscale Res Lett. 2012. PMID: 22439604 Free PMC article.
Feedback