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Variability Predictions for the Next Technology Generations of n-type SixGe1-x Nanowire MOSFETs.
Micromachines (Basel). 2018 Dec 5;9(12):643. doi: 10.3390/mi9120643.
Micromachines (Basel). 2018.
PMID: 30563045
Free PMC article.
Simulation of the Impact of Ionized Impurity Scattering on the Total Mobility in Si Nanowire Transistors.
Sadi T, Medina-Bailon C, Nedjalkov M, Lee J, Badami O, Berrada S, Carrillo-Nunez H, Georgiev V, Selberherr S, Asenov A.
Sadi T, et al. Among authors: badami o.
Materials (Basel). 2019 Jan 2;12(1):124. doi: 10.3390/ma12010124.
Materials (Basel). 2019.
PMID: 30609720
Free PMC article.
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