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Year Number of Results
2012 1
2013 2
2014 7
2015 9
2016 7
2017 3
2018 4
2019 3
2020 1
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35 results
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Page 1
Realizing Large-Scale, Electronic-Grade Two-Dimensional Semiconductors.
Lin YC, Jariwala B, Bersch BM, Xu K, Nie Y, Wang B, Eichfeld SM, Zhang X, Choudhury TH, Pan Y, Addou R, Smyth CM, Li J, Zhang K, Haque MA, Fölsch S, Feenstra RM, Wallace RM, Cho K, Fullerton-Shirey SK, Redwing JM, Robinson JA. Lin YC, et al. Among authors: addou r. ACS Nano. 2018 Feb 27;12(2):965-975. doi: 10.1021/acsnano.7b07059. Epub 2018 Jan 23. ACS Nano. 2018. PMID: 29360349
Dislocation driven spiral and non-spiral growth in layered chalcogenides.
Nie Y , Barton AT , Addou R , Zheng Y , Walsh LA , Eichfeld SM , Yue R , Cormier CR , Zhang C , Wang Q , Liang C , Robinson JA , Kim M , Vandenberghe W , Colombo L , Cha PR , Wallace RM , Hinkle CL , Cho K . Nie Y , et al. Among authors: addou r. Nanoscale. 2018 Aug 9;10(31):15023-15034. doi: 10.1039/c8nr02280a. Nanoscale. 2018. PMID: 30052245
High-Mobility Helical Tellurium Field-Effect Transistors Enabled by Transfer-Free, Low-Temperature Direct Growth.
Zhou G, Addou R, Wang Q, Honari S, Cormier CR, Cheng L, Yue R, Smyth CM, Laturia A, Kim J, Vandenberghe WG, Kim MJ, Wallace RM, Hinkle CL. Zhou G, et al. Among authors: addou r. Adv Mater. 2018 Jul 18:e1803109. doi: 10.1002/adma.201803109. Online ahead of print. Adv Mater. 2018. PMID: 30022534
Surface Defects on Natural MoS2.
Addou R, Colombo L, Wallace RM. Addou R, et al. ACS Appl Mater Interfaces. 2015 Jun 10;7(22):11921-9. doi: 10.1021/acsami.5b01778. Epub 2015 May 27. ACS Appl Mater Interfaces. 2015. PMID: 25980312
Impurities and Electronic Property Variations of Natural MoS2 Crystal Surfaces.
Addou R, McDonnell S, Barrera D, Guo Z, Azcatl A, Wang J, Zhu H, Hinkle CL, Quevedo-Lopez M, Alshareef HN, Colombo L, Hsu JW, Wallace RM. Addou R, et al. ACS Nano. 2015 Sep 22;9(9):9124-33. doi: 10.1021/acsnano.5b03309. Epub 2015 Aug 27. ACS Nano. 2015. PMID: 26301428
Impact of Etch Processes on the Chemistry and Surface States of the Topological Insulator Bi2Se3.
Barton AT, Walsh LA, Smyth CM, Qin X, Addou R, Cormier C, Hurley PK, Wallace RM, Hinkle CL. Barton AT, et al. Among authors: addou r. ACS Appl Mater Interfaces. 2019 Sep 4;11(35):32144-32150. doi: 10.1021/acsami.9b10625. Epub 2019 Aug 26. ACS Appl Mater Interfaces. 2019. PMID: 31416305
Enhancing Interconnect Reliability and Performance by Converting Tantalum to 2D Layered Tantalum Sulfide at Low Temperature.
Lo CL, Catalano M, Khosravi A, Ge W, Ji Y, Zemlyanov DY, Wang L, Addou R, Liu Y, Wallace RM, Kim MJ, Chen Z. Lo CL, et al. Among authors: addou r. Adv Mater. 2019 Jul;31(30):e1902397. doi: 10.1002/adma.201902397. Epub 2019 Jun 11. Adv Mater. 2019. PMID: 31183907
Partially Fluorinated Graphene: Structural and Electrical Characterization.
Cheng L, Jandhyala S, Mordi G, Lucero AT, Huang J, Azcatl A, Addou R, Wallace RM, Colombo L, Kim J. Cheng L, et al. Among authors: addou r. ACS Appl Mater Interfaces. 2016 Feb;8(7):5002-8. doi: 10.1021/acsami.5b11701. Epub 2016 Feb 10. ACS Appl Mater Interfaces. 2016. PMID: 26820099
Fermi Level Manipulation through Native Doping in the Topological Insulator Bi2Se3.
Walsh LA, Green AJ, Addou R, Nolting W, Cormier CR, Barton AT, Mowll TR, Yue R, Lu N, Kim J, Kim MJ, LaBella VP, Ventrice CA Jr, McDonnell S, Vandenberghe WG, Wallace RM, Diebold A, Hinkle CL. Walsh LA, et al. Among authors: addou r. ACS Nano. 2018 Jun 26;12(6):6310-6318. doi: 10.1021/acsnano.8b03414. Epub 2018 Jun 8. ACS Nano. 2018. PMID: 29874037
Near-unity photoluminescence quantum yield in MoS₂.
Amani M, Lien DH, Kiriya D, Xiao J, Azcatl A, Noh J, Madhvapathy SR, Addou R, KC S, Dubey M, Cho K, Wallace RM, Lee SC, He JH, Ager JW 3rd, Zhang X, Yablonovitch E, Javey A. Amani M, et al. Among authors: addou r. Science. 2015 Nov 27;350(6264):1065-8. doi: 10.1126/science.aad2114. Science. 2015. PMID: 26612948 Free article.
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