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2019 1
2021 0
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Page 1
Temperature Investigation on 3C-SiC Homo-Epitaxy on Four-Inch Wafers.
Anzalone R, Zimbone M, Calabretta C, Mauceri M, Alberti A, Reitano R, La Via F. Anzalone R, et al. Among authors: reitano r. Materials (Basel). 2019 Oct 10;12(20):3293. doi: 10.3390/ma12203293. Materials (Basel). 2019. PMID: 31658766 Free PMC article.