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Table representation of search results timeline featuring number of search results per year.

Year Number of Results
2009 1
2010 1
2011 1
2012 4
2013 4
2014 13
2015 11
2016 14
2017 8
2018 5
2019 5
2020 1
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65 results
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Page 1
Realizing Large-Scale, Electronic-Grade Two-Dimensional Semiconductors.
Lin YC, Jariwala B, Bersch BM, Xu K, Nie Y, Wang B, Eichfeld SM, Zhang X, Choudhury TH, Pan Y, Addou R, Smyth CM, Li J, Zhang K, Haque MA, Fölsch S, Feenstra RM, Wallace RM, Cho K, Fullerton-Shirey SK, Redwing JM, Robinson JA. Lin YC, et al. Among authors: Wallace RM. ACS Nano. 2018 Feb 27;12(2):965-975. doi: 10.1021/acsnano.7b07059. Epub 2018 Jan 23. ACS Nano. 2018. PMID: 29360349
Dislocation driven spiral and non-spiral growth in layered chalcogenides.
Nie Y , Barton AT , Addou R , Zheng Y , Walsh LA , Eichfeld SM , Yue R , Cormier CR , Zhang C , Wang Q , Liang C , Robinson JA , Kim M , Vandenberghe W , Colombo L , Cha PR , Wallace RM , Hinkle CL , Cho K . Nie Y , et al. Among authors: Wallace RM. Nanoscale. 2018 Aug 9;10(31):15023-15034. doi: 10.1039/c8nr02280a. Nanoscale. 2018. PMID: 30052245
Two-dimensional gallium nitride realized via graphene encapsulation.
Al Balushi ZY, Wang K, Ghosh RK, Vilá RA, Eichfeld SM, Caldwell JD, Qin X, Lin YC, DeSario PA, Stone G, Subramanian S, Paul DF, Wallace RM, Datta S, Redwing JM, Robinson JA. Al Balushi ZY, et al. Among authors: Wallace RM. Nat Mater. 2016 Nov;15(11):1166-1171. doi: 10.1038/nmat4742. Epub 2016 Aug 29. Nat Mater. 2016. PMID: 27571451
Fermi Level Manipulation through Native Doping in the Topological Insulator Bi2Se3.
Walsh LA, Green AJ, Addou R, Nolting W, Cormier CR, Barton AT, Mowll TR, Yue R, Lu N, Kim J, Kim MJ, LaBella VP, Ventrice CA Jr, McDonnell S, Vandenberghe WG, Wallace RM, Diebold A, Hinkle CL. Walsh LA, et al. Among authors: Wallace RM. ACS Nano. 2018 Jun 26;12(6):6310-6318. doi: 10.1021/acsnano.8b03414. Epub 2018 Jun 8. ACS Nano. 2018. PMID: 29874037
High-Mobility Helical Tellurium Field-Effect Transistors Enabled by Transfer-Free, Low-Temperature Direct Growth.
Zhou G, Addou R, Wang Q, Honari S, Cormier CR, Cheng L, Yue R, Smyth CM, Laturia A, Kim J, Vandenberghe WG, Kim MJ, Wallace RM, Hinkle CL. Zhou G, et al. Among authors: Wallace RM. Adv Mater. 2018 Jul 18:e1803109. doi: 10.1002/adma.201803109. Online ahead of print. Adv Mater. 2018. PMID: 30022534
Investigation of the Physical Properties of Plasma Enhanced Atomic Layer Deposited Silicon Nitride as Etch Stopper.
Kim HS, Meng X, Kim SJ, Lucero AT, Cheng L, Byun YC, Lee JS, Hwang SM, Kondusamy ALN, Wallace RM, Goodman G, Wan AS, Telgenhoff M, Hwang BK, Kim J. Kim HS, et al. Among authors: Wallace RM. ACS Appl Mater Interfaces. 2018 Dec 26;10(51):44825-44833. doi: 10.1021/acsami.8b15291. Epub 2018 Dec 11. ACS Appl Mater Interfaces. 2018. PMID: 30485061
Atomically Traceable Nanostructure Fabrication.
Ballard JB, Dick DD, McDonnell SJ, Bischof M, Fu J, Owen JH, Owen WR, Alexander JD, Jaeger DL, Namboodiri P, Fuchs E, Chabal YJ, Wallace RM, Reidy R, Silver RM, Randall JN, Von Ehr J. Ballard JB, et al. Among authors: Wallace RM. J Vis Exp. 2015 Jul 17;(101):e52900. doi: 10.3791/52900. J Vis Exp. 2015. PMID: 26274555 Free PMC article.
Surface Defects on Natural MoS2.
Addou R, Colombo L, Wallace RM. Addou R, et al. Among authors: Wallace RM. ACS Appl Mater Interfaces. 2015 Jun 10;7(22):11921-9. doi: 10.1021/acsami.5b01778. Epub 2015 May 27. ACS Appl Mater Interfaces. 2015. PMID: 25980312
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