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2020 2
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Enhanced Ferroelectric Properties and Insulator-Metal Transition-Induced Shift of Polarization-Voltage Hysteresis Loop in VOx-Capped Hf0.5Zr0.5O2 Thin Films.
Zhang Y, Fan Z, Wang D, Wang J, Zou Z, Li Y, Li Q, Tao R, Chen D, Zeng M, Gao X, Dai J, Zhou G, Lu X, Liu JM. Zhang Y, et al. Among authors: tao r. ACS Appl Mater Interfaces. 2020 Sep 9;12(36):40510-40517. doi: 10.1021/acsami.0c10964. Epub 2020 Aug 26. ACS Appl Mater Interfaces. 2020. PMID: 32805812
All-Aluminum Thin Film Transistor Fabrication at Room Temperature.
Yao R, Zheng Z, Zeng Y, Liu X, Ning H, Hu S, Tao R, Chen J, Cai W, Xu M, Wang L, Lan L, Peng J. Yao R, et al. Among authors: tao r. Materials (Basel). 2017 Feb 23;10(3):222. doi: 10.3390/ma10030222. Materials (Basel). 2017. PMID: 28772579 Free PMC article.
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