Shunichi Arisawa - Search Results

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Year	Number of Results
2012	1
2019	2
2024	0

Page 1

Single-crystalline boron-doped diamond superconducting quantum interference devices with regrowth-induced step edge structure.

Kageura T, Hideko M, Tsuyuzaki I, Morishita A, Kawano A, Sasama Y, Yamaguchi T, Takano Y, Tachiki M, Ooi S, Hirata K, Arisawa S, Kawarada H. Kageura T, et al. Among authors: arisawa s. Sci Rep. 2019 Oct 23;9(1):15214. doi: 10.1038/s41598-019-51596-w. Sci Rep. 2019. PMID: 31645621 Free PMC article.

Epitaxial Non c-Axis Twin-Free Bi₂Sr₂CaCu₂O_8+δ Thin Films for Future THz Devices.

Endo K, Arisawa S, Badica P. Endo K, et al. Among authors: arisawa s. Materials (Basel). 2019 Apr 5;12(7):1124. doi: 10.3390/ma12071124. Materials (Basel). 2019. PMID: 30959795 Free PMC article.

Growth of single-crystal Ca10(Pt4As8)(Fe(1.8)Pt(0.2)As2)5 nanowhiskers with superconductivity up to 33 K.

Li J, Yuan J, Tang DM, Zhang SB, Li MY, Guo YF, Tsujimoto Y, Hatano T, Arisawa S, Golberg D, Wang HB, Yamaura K, Takayama-Muromachi E. Li J, et al. Among authors: arisawa s. J Am Chem Soc. 2012 Mar 7;134(9):4068-71. doi: 10.1021/ja212067g. Epub 2012 Feb 24. J Am Chem Soc. 2012. PMID: 22352415

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