Stoyan Nihtianov - Search Results

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Author Correction: A doping-less junction-formation mechanism between n-silicon and an atomically thin boron layer.

Mohammadi V, Nihtianov S, Fang C. Mohammadi V, et al. Among authors: nihtianov s. Sci Rep. 2021 Oct 12;11(1):20579. doi: 10.1038/s41598-021-99821-9. Sci Rep. 2021. PMID: 34642419 Free PMC article. No abstract available.

A doping-less junction-formation mechanism between n-silicon and an atomically thin boron layer.

Mohammadi V, Nihtianov S, Fang C. Mohammadi V, et al. Among authors: nihtianov s. Sci Rep. 2017 Oct 16;7(1):13247. doi: 10.1038/s41598-017-13100-0. Sci Rep. 2017. PMID: 29038490 Free PMC article.

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