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X-ray characterization of physical-vapor-transport-grown bulk AlN single crystals.
J Appl Crystallogr. 2020 Jul 30;53(Pt 4):1080-1086. doi: 10.1107/S1600576720008961. eCollection 2020 Aug 1.
J Appl Crystallogr. 2020.
PMID: 32788905
Free PMC article.
Vertical Leakage in GaN-on-Si Stacks Investigated by a Buffer Decomposition Experiment.
Tajalli A, Borga M, Meneghini M, De Santi C, Benazzi D, Besendörfer S, Püsche R, Derluyn J, Degroote S, Germain M, Kabouche R, Abid I, Meissner E, Zanoni E, Medjdoub F, Meneghesso G.
Tajalli A, et al. Among authors: besendorfer s.
Micromachines (Basel). 2020 Jan 17;11(1):101. doi: 10.3390/mi11010101.
Micromachines (Basel). 2020.
PMID: 31963553
Free PMC article.
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The impact of dislocations on AlGaN/GaN Schottky diodes and on gate failure of high electron mobility transistors.
Besendörfer S, Meissner E, Medjdoub F, Derluyn J, Friedrich J, Erlbacher T.
Besendörfer S, et al.
Sci Rep. 2020 Oct 14;10(1):17252. doi: 10.1038/s41598-020-73977-2.
Sci Rep. 2020.
PMID: 33057086
Free PMC article.
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High Breakdown Voltage and Low Buffer Trapping in Superlattice GaN-on-Silicon Heterostructures for High Voltage Applications.
Tajalli A, Meneghini M, Besendörfer S, Kabouche R, Abid I, Püsche R, Derluyn J, Degroote S, Germain M, Meissner E, Zanoni E, Medjdoub F, Meneghesso G.
Tajalli A, et al. Among authors: besendorfer s.
Materials (Basel). 2020 Sep 25;13(19):4271. doi: 10.3390/ma13194271.
Materials (Basel). 2020.
PMID: 32992721
Free PMC article.
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