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Correction to Weakly Trapped, Charged, and Free Excitons in Single-Layer MoS2 in the Presence of Defects, Strain, and Charged Impurities.
Dubey S, Lisi S, Nayak G, Herziger F, Nguyen VD, Le Quang T, Cherkez V, González C, Dappe YJ, Watanabe K, Taniguchi T, Magaud L, Mallet P, Veuillen JY, Arenal R, Marty L, Renard J, Bendiab N, Coraux J, Bouchiat V. Dubey S, et al. ACS Nano. 2018 Oct 23;12(10):10565-10566. doi: 10.1021/acsnano.8b07086. Epub 2018 Sep 20. ACS Nano. 2018. PMID: 30234967 No abstract available.
Weakly Trapped, Charged, and Free Excitons in Single-Layer MoS2 in the Presence of Defects, Strain, and Charged Impurities.
Dubey S, Lisi S, Nayak G, Herziger F, Nguyen VD, Le Quang T, Cherkez V, González C, Dappe YJ, Watanabe K, Taniguchi T, Magaud L, Mallet P, Veuillen JY, Arenal R, Marty L, Renard J, Bendiab N, Coraux J, Bouchiat V. Dubey S, et al. ACS Nano. 2017 Nov 28;11(11):11206-11216. doi: 10.1021/acsnano.7b05520. Epub 2017 Oct 18. ACS Nano. 2017. PMID: 28992415