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Page 1
Multiple increase in the radiative efficiency of 1060-nm laser diodes based on heterostructures with tunnel-coupled injection and a single waveguide mode.
Opt Lett. 2023 Jan 15;48(2):203-206. doi: 10.1364/OL.476248.
Opt Lett. 2023.
PMID: 36638418
Surface Nanostructuring during Selective Area Epitaxy of Heterostructures with InGaAs QWs in the Ultra-Wide Windows.
Shamakhov V, Nikolaev D, Slipchenko S, Fomin E, Smirnov A, Eliseyev I, Pikhtin N, Kop Ev P.
Shamakhov V, et al.
Nanomaterials (Basel). 2020 Dec 23;11(1):11. doi: 10.3390/nano11010011.
Nanomaterials (Basel). 2020.
PMID: 33374632
Free PMC article.
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Ultrabroad tuning range (100 nm) of external-cavity continuous-wave high-power semiconductor lasers based on a single InGaAs quantum well.
Podoskin A, Golovin V, Gavrina P, Veselov D, Zolotarev V, Shamakhov V, Nikolaev D, Leshko A, Slipchenko S, Pikhtin N, Kopév P.
Podoskin A, et al. Among authors: shamakhov v.
Appl Opt. 2019 Nov 20;58(33):9089-9093. doi: 10.1364/AO.58.009089.
Appl Opt. 2019.
PMID: 31873586
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Selective Area Epitaxy of Highly Strained InGaAs Quantum Wells (980-990 nm) in Ultrawide Windows Using Metalorganic Chemical Vapor Deposition.
Shamakhov V, Slipchenko S, Nikolaev D, Smirnov A, Eliseyev I, Grishin A, Kondratov M, Shashkin I, Pikhtin N.
Shamakhov V, et al.
Nanomaterials (Basel). 2023 Aug 22;13(17):2386. doi: 10.3390/nano13172386.
Nanomaterials (Basel). 2023.
PMID: 37686894
Free PMC article.
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