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Page 1
Nearly Lattice-Matched GaN Distributed Bragg Reflectors with Enhanced Performance.
Materials (Basel). 2022 May 14;15(10):3536. doi: 10.3390/ma15103536.
Materials (Basel). 2022.
PMID: 35629563
Free PMC article.
Exploring an Approach toward the Intrinsic Limits of GaN Electronics.
Jiang S, Cai Y, Feng P, Shen S, Zhao X, Fletcher P, Esendag V, Lee KB, Wang T.
Jiang S, et al. Among authors: esendag v.
ACS Appl Mater Interfaces. 2020 Mar 18;12(11):12949-12954. doi: 10.1021/acsami.9b19697. Epub 2020 Mar 5.
ACS Appl Mater Interfaces. 2020.
PMID: 32090550
Free PMC article.
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Influence of a Two-Dimensional Growth Mode on Electrical Properties of the GaN Buffer in an AlGaN/GaN High Electron Mobility Transistor.
Esendag V, Feng P, Zhu C, Ni R, Bai J, Wang T.
Esendag V, et al.
Materials (Basel). 2022 Sep 1;15(17):6043. doi: 10.3390/ma15176043.
Materials (Basel). 2022.
PMID: 36079422
Free PMC article.
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Strain Analysis of GaN HEMTs on (111) Silicon with Two Transitional AlxGa1-xN Layers.
Cai Y, Zhu C, Jiu L, Gong Y, Yu X, Bai J, Esendag V, Wang T.
Cai Y, et al. Among authors: esendag v.
Materials (Basel). 2018 Oct 13;11(10):1968. doi: 10.3390/ma11101968.
Materials (Basel). 2018.
PMID: 30322130
Free PMC article.
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