Zhihu Xia - Search Results

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Analysis of the mechanisms by which sputtered AlN nucleation layers enhance the performance of red InGaN-based LEDs.

Xing K, Jin Z, Xia Z, Hu J, Yang X, Sang Y, Tao T, Zhuang Z, Zhang R, Liu B. Xing K, et al. Among authors: xia z. Opt Express. 2024 Aug 12;32(17):29474-29482. doi: 10.1364/OE.531223. Opt Express. 2024. PMID: 39573136 Free article.

Demonstration of 651 nm InGaN-based red light-emitting diode with an external quantum efficiency over 6% by InGaN/AlN strain release interlayer.

Xing K, Hu J, Pan Z, Xia Z, Jin Z, Wang L, Jiang X, Wang H, Zeng H, Wang X. Xing K, et al. Among authors: xia z. Opt Express. 2024 Mar 25;32(7):11377-11386. doi: 10.1364/OE.518741. Opt Express. 2024. PMID: 38570986 Free article.

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