Fully Integrated Silicon Photonic Erbium-Doped Nanodiode for Few Photon Emission at Telecom Wavelengths.
Tavani G, Barri C, Mafakheri E, Franzò G, Celebrano M, Castriotta M, Di Giancamillo M, Ferrari G, Picciariello F, Foletto G, Agnesi C, Vallone G, Villoresi P, Sorianello V, Rotta D, Finazzi M, Bollani M, Prati E.
Tavani G, et al.
Materials (Basel). 2023 Mar 15;16(6):2344. doi: 10.3390/ma16062344.
Materials (Basel). 2023.
PMID: 36984223
Free PMC article.
We demonstrate emission rates around 5 106 photons/s for a 1 m 1 m device at room temperature using superconducting nanowire detectors cooled at 0.8 K. The demonstration of Er:O diodes integrated in the 220 nm SOI platform paves the way towards the creation of integrated s …
We demonstrate emission rates around 5 106 photons/s for a 1 m 1 m device at room temperature using superconducting nanowire detectors coole …