Engineering Boron Vacancy Defects in Boron Nitride Nanotubes.
Hennessey M, Whitefield B, Singh P, Alijani H, Abe H, Ohshima T, Gavin C, Broadway DA, Toth M, Tetienne JP, Aharonovich I, Kianinia M.
Hennessey M, et al.
ACS Appl Mater Interfaces. 2024 Oct 23;16(42):57552-57557. doi: 10.1021/acsami.4c12802. Epub 2024 Oct 10.
ACS Appl Mater Interfaces. 2024.
PMID: 39390758
In particular, the negatively charged boron vacancy (V(B)(-)) centers have been engineered in bulk hBN and few-layer hBN flakes, and employed for sensing. Here, we investigate the engineering of V(B)(-) spin defects in boron nitride nanotubes (BNNTs). The generated …
In particular, the negatively charged boron vacancy (V(B)(-)) centers have been engineered in bulk hBN and few-layer hBN flakes, and …