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140 results

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Page 1
Photoconductivity Multiplication in Semiconducting Few-Layer MoTe(2).
Zheng W, Bonn M, Wang HI. Zheng W, et al. Nano Lett. 2020 Aug 12;20(8):5807-5813. doi: 10.1021/acs.nanolett.0c01693. Epub 2020 Jul 27. Nano Lett. 2020. PMID: 32697101 Free PMC article.
We report efficient photoconductivity multiplication in few-layer 2H-MoTe(2) as a direct consequence of an efficient steplike carrier multiplication with near unity quantum yield and high carrier mobility (45 cm(2) V(-1) s(-1)) in MoTe(2). ...We discuss the p …
We report efficient photoconductivity multiplication in few-layer 2H-MoTe(2) as a direct consequence of an efficient steplike carrier …
Substitutional doping of MoTe(2)/ZrS(2) heterostructures for sustainable energy related applications.
Li XH, Wang BJ, Yang XF, Yu WY, Ke SH. Li XH, et al. Phys Chem Chem Phys. 2023 Oct 18;25(40):27017-27026. doi: 10.1039/d3cp03563h. Phys Chem Chem Phys. 2023. PMID: 37789808
Here, by employing first-principles calculations, we propose that a pristine MoTe(2)/ZrS(2) heterostructure is a distinguished lithium-ion battery anode material with a low Li diffusion barrier (0.26 eV), and it has a high maximum Li storage capacity (476.36 mA h g(-1)) an …
Here, by employing first-principles calculations, we propose that a pristine MoTe(2)/ZrS(2) heterostructure is a distinguished lithiu …
Theoretical Study of Dissolved Gas Molecules in Transformer Oil Adsorbed on Intrinsic and TM (Ta, V)-Doped MoTe(2) Monolayer.
Deng H, Ni J, Lin J, Wang W, Chen Y. Deng H, et al. Langmuir. 2024 Jul 16;40(28):14652-14662. doi: 10.1021/acs.langmuir.4c01585. Epub 2024 Jul 1. Langmuir. 2024. PMID: 38949915
In this paper, CH(4), C(2)H(2), H(2), and CO adsorbed on intrinsic MoTe(2) monolayer and transition metal atom (Ta, V)-doped MoTe(2) monolayer have been investigated with density functional theory based on first-principles study. The adsorption energy, geomet …
In this paper, CH(4), C(2)H(2), H(2), and CO adsorbed on intrinsic MoTe(2) monolayer and transition metal atom (Ta, V)-doped …
High-Performance Complementary Circuits from Two-Dimensional MoTe(2).
Cai J, Sun Z, Wu P, Tripathi R, Lan HY, Kong J, Chen Z, Appenzeller J. Cai J, et al. Nano Lett. 2023 Dec 13;23(23):10939-10945. doi: 10.1021/acs.nanolett.3c03184. Epub 2023 Nov 17. Nano Lett. 2023. PMID: 37976291
The fabricated n-FETs with palladium contact can reach electron currents up to 275 muA/mum at V(DS) = 2 V. For p-FETs, we introduce a novel nitric oxide doping strategy, allowing a controlled transition of MoTe(2) FETs from n-type to unipolar p-type. By dopin …
The fabricated n-FETs with palladium contact can reach electron currents up to 275 muA/mum at V(DS) = 2 V. For p-FETs, we intr …
Effect of Combination Model of MoTe(2) and MXene Layers on Sodium Ion Storage.
Zong J, Liang Y, Liu F, Zhang M, Feng J, Xi B, Xiong S. Zong J, et al. Adv Mater. 2025 Jun 10:e2503252. doi: 10.1002/adma.202503252. Online ahead of print. Adv Mater. 2025. PMID: 40492953
Compared with MX@MoTe(2)-V, the new interface formed between MoTe(2) and MXene in MX@MoTe(2)-P has a stronger van der Waals interaction and larger contact area, helpful to store more sodium ions and contributing to its excellent structural stability an …
Compared with MX@MoTe(2)-V, the new interface formed between MoTe(2) and MXene in MX@MoTe(2)-P has a stronger va …
Modulation of electrical properties in MoTe(2) by XeF(2)-mediated surface oxidation.
Ji E, Kim JH, Lee W, Shin JC, Seo H, Ihm K, Park JW, Lee GH. Ji E, et al. Nanoscale Adv. 2022 Jan 5;4(4):1191-1198. doi: 10.1039/d1na00783a. eCollection 2022 Feb 15. Nanoscale Adv. 2022. PMID: 36131764 Free PMC article.
Here, we demonstrate the XeF(2)-mediated surface oxidation of 2H-MoTe(2) (alpha phase MoTe(2)). MoTe(2) exposed to XeF(2) gas forms a thin and uniform oxidized layer (2.5 nm-thick MoO (x) ) on MoTe(2) regardless of the exposure time (within 120 s) due …
Here, we demonstrate the XeF(2)-mediated surface oxidation of 2H-MoTe(2) (alpha phase MoTe(2)). MoTe(2) exposed to XeF( …
Defect-Affected Photocurrent in MoTe(2) FETs.
Ghimire MK, Ji H, Gul HZ, Yi H, Jiang J, Lim SC. Ghimire MK, et al. ACS Appl Mater Interfaces. 2019 Mar 13;11(10):10068-10073. doi: 10.1021/acsami.9b00050. Epub 2019 Feb 26. ACS Appl Mater Interfaces. 2019. PMID: 30762341
In this study, we report the effect of mid gap trap states on photocurrent in 10 atomic layered 2H-MoTe(2). Our study reveals that the photocurrent is very sensitive to the number of active traps, which can be controlled by V(gs). ...
In this study, we report the effect of mid gap trap states on photocurrent in 10 atomic layered 2H-MoTe(2). Our study reveals that th …
Bulk Photovoltaic Effect in Two-Dimensional Distorted MoTe(2).
Aftab S, Shehzad MA, Salman Ajmal HM, Kabir F, Iqbal MZ, Al-Kahtani AA. Aftab S, et al. ACS Nano. 2023 Sep 26;17(18):17884-17896. doi: 10.1021/acsnano.3c03593. Epub 2023 Sep 1. ACS Nano. 2023. PMID: 37656985
Here, we unveiled mechanical distortion-induced bulk photovoltaic behavior in a two-dimensional (2D) material, MoTe(2), caused by the phase transition and broken inversion symmetry in MoTe(2). The phase transition from single-crystalline semiconducting 2H-MoTe …
Here, we unveiled mechanical distortion-induced bulk photovoltaic behavior in a two-dimensional (2D) material, MoTe(2), caused by the …
Dielectric engineering enable to lateral anti-ambipolar MoTe(2)heterojunction.
Geng G, Wu E, Xu L, Hu X, Miao X, Zou J, Wu S, Liu J, Liu Y, He Z. Geng G, et al. Nanotechnology. 2022 Feb 1;33(17). doi: 10.1088/1361-6528/ac49c2. Nanotechnology. 2022. PMID: 35008081
And the maximum surface potential difference between the intrinsic h-BN (h-BN) and the Ga(+)implanted h-BN (Ga(+)-h-BN) is up to 1.3 V, which is characterized by Kelvin probe force microscopy. More importantly, the MoTe(2)transistor stacked on Ga(+)-h-BN exhibits p- …
And the maximum surface potential difference between the intrinsic h-BN (h-BN) and the Ga(+)implanted h-BN (Ga(+)-h-BN) is up to 1.3 V …
High-performance parallel tandem MoTe(2)/perovskite solar cell based on reduced graphene oxide as hole transport layer.
Gholipoor M, Solhtalab N, Mohammadi MH. Gholipoor M, et al. Sci Rep. 2022 Nov 28;12(1):20455. doi: 10.1038/s41598-022-25015-6. Sci Rep. 2022. PMID: 36443437 Free PMC article.
As a result, the proposed multijunction PCS yields a high power conversion efficiency (PCE) of 18.52% with a V(OC) of 0.83 V, J(sc) of 26.25 mA/cm(2), and FF of 0.84, which is considerably greater than its corresponding single-junction PSCs with PCE, V(OC), J …
As a result, the proposed multijunction PCS yields a high power conversion efficiency (PCE) of 18.52% with a V(OC) of 0.83 V, …
140 results