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Year Number of Results
1919 1
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1968 2
1971 2
1975 2
1976 6
1977 3
1978 6
1979 9
1980 11
1981 5
1982 11
1983 10
1984 11
1985 18
1986 21
1987 17
1988 14
1989 20
1990 29
1991 31
1992 33
1993 34
1994 36
1995 38
1996 39
1997 62
1998 71
1999 79
2000 82
2001 98
2002 108
2003 109
2004 156
2005 196
2006 236
2007 209
2008 278
2009 307
2010 322
2011 343
2012 369
2013 426
2014 475
2015 493
2016 513
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2018 613
2019 637
2020 790
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10,401 results

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Page 1
Reply to X Tan and C Benedict.
Taylor MK, Sullivan DK, Burns JM. Taylor MK, et al. Am J Clin Nutr. 2018 Mar 1;107(3):480-481. doi: 10.1093/ajcn/nqx075. Am J Clin Nutr. 2018. PMID: 29566199 Free article. No abstract available.
Influence of the active TaN/ZrO (x) /Ni memristor layer oxygen content on forming and resistive switching behavior.
Voronkovskii VA, Aliev VS, Gerasimova AK, Perevalov TV, Prosvirin IP, Islamov DR. Voronkovskii VA, et al. Nanotechnology. 2021 Feb 23;32(18):185205. doi: 10.1088/1361-6528/abce7b. Online ahead of print. Nanotechnology. 2021. PMID: 33620032
The multiple resistive switching phenomenon in TaN/ZrO (x) /Ni memristors was found to occur in a certain range of x 1.78. With the x value decreasing in the oxide layers, the forming voltage of memristors decreased. ...In order to identify the underly …
The multiple resistive switching phenomenon in TaN/ZrO (x) /Ni memristors was found to occur in a certain range of x 1. …
Nanoindentation and Structural Analysis of Sintered TiAl((100-x))-(x)TaN Composites at Room Temperature.
Babalola BJ, Ayodele OO, Olubambi PA. Babalola BJ, et al. Materials (Basel). 2023 Mar 24;16(7):2607. doi: 10.3390/ma16072607. Materials (Basel). 2023. PMID: 37048901 Free PMC article.
The nanohardness, elastic modulus, anti-wear, and deformability characteristics of TiAl((100-x))-(x)TaN composites containing 0, 2, 4, 6, 8, and 10 wt.% of TaN were investigated via nanoindentation technique in the present study. The TiAl((100-x
The nanohardness, elastic modulus, anti-wear, and deformability characteristics of TiAl((100-x))-(x)TaN composites cont …
Analog Resistive Switching and Artificial Synaptic Behavior of ITO/WO(X)/TaN Memristors.
Cho Y, Kim J, Kang M, Kim S. Cho Y, et al. Materials (Basel). 2023 Feb 17;16(4):1687. doi: 10.3390/ma16041687. Materials (Basel). 2023. PMID: 36837316 Free PMC article.
In this work, we fabricated an ITO/WO(X)/TaN memristor device by reactive sputtering to investigate resistive switching and conduct analog resistive switching to implement artificial synaptic devices. ...Lastly, the potentiation/depression characteristics were exami …
In this work, we fabricated an ITO/WO(X)/TaN memristor device by reactive sputtering to investigate resistive switching and co …
Self-supported amorphous TaN(x)(O(y))/nickel foam thin film as an advanced electrocatalyst for hydrogen evolution reaction.
Thiyagarajan GB, Mukkavilli RS, Graf D, Fischer T, Wilhelm M, Christiansen S, Mathur S, Kumar R. Thiyagarajan GB, et al. Chem Commun (Camb). 2022 Mar 8;58(20):3310-3313. doi: 10.1039/d2cc00151a. Chem Commun (Camb). 2022. PMID: 35179160
The morphological analyses revealed the formation of thin film of core-shell structured TaN(x)(O(y)) coating (ca. 236 nm) on NF. In 0.5 M H(2)SO(4), TaN(x)(O(y))/NF exhibited enhanced HER activity with a low onset potential as compared to the bare NF ( …
The morphological analyses revealed the formation of thin film of core-shell structured TaN(x)(O(y)) coating (ca. 236 nm) on N …
Electrical Manipulation of Orbital Current Via Oxygen Migration in Ni(81) Fe(19) /CuO(x) /TaN Heterostructure.
An T, Cui B, Zhang M, Liu F, Cheng S, Zhang K, Ren X, Liu L, Cheng B, Jiang C, Hu J. An T, et al. Adv Mater. 2023 Jun;35(25):e2300858. doi: 10.1002/adma.202300858. Epub 2023 Apr 28. Adv Mater. 2023. PMID: 36976522
In this study, it is demonstrated that a sizable magnetoresistance effect related to orbital current and SOT can be observed in Ni(81) Fe(19) /CuO(x) /TaN heterostructures with various CuO(x) oxidization concentrations. The ionic liquid gating induces the mig …
In this study, it is demonstrated that a sizable magnetoresistance effect related to orbital current and SOT can be observed in Ni(81) Fe(19 …
Large-area TaN superconducting microwire single photon detectors for X-ray detection.
Yang C, Si M, Zhang X, Yu A, Huang J, Pan Y, Li H, Li L, Wang Z, Zhang S, Xia J, Liu Z, Guo H, You L. Yang C, et al. Opt Express. 2021 Jul 5;29(14):21400-21408. doi: 10.1364/OE.422581. Opt Express. 2021. PMID: 34265928 Free article.
With the development of superconducting nanowire single photon detectors, increasing numbers of important applications are being explored, covering not only low-energy optical photon detection but also high-energy photon and particle detection. In this work, 100-nm-thick TaN
With the development of superconducting nanowire single photon detectors, increasing numbers of important applications are being explored, c …
Retraction.
[No authors listed] [No authors listed] Headache. 2011 Mar;51(3):465. doi: 10.1111/j.1526-4610.2011.01853.x. Headache. 2011. PMID: 28792622
The following article from Headache: The Journal of Head and Face Pain, "Prevalence and Burden of Headache Disorders: A Comparative Regional Study in China," by Ning Luo PhD, Yannan Fang PhD, Feng Tan MD, Qian Zhang MD, Daliang Zou MD, Xiutang Cao PhD, Xuehua Xu MD, Hua Ba …
The following article from Headache: The Journal of Head and Face Pain, "Prevalence and Burden of Headache Disorders: A Comparative Regional …
Iatrogenic kindness.
Jesudason E. Jesudason E. J Med Ethics. 2025 Mar 12:jme-2025-110880. doi: 10.1136/jme-2025-110880. Online ahead of print. J Med Ethics. 2025. PMID: 40074324
Rather than insisting on these as aberrations, I wondered whether, our practice of kindness may, as with use of antibiotics or X-rays, have its own less considered but nonetheless harmful side effects. Here, encouraged by the resulting interest, I reflect further, includin …
Rather than insisting on these as aberrations, I wondered whether, our practice of kindness may, as with use of antibiotics or X-rays …
10,401 results
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