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Multifunctional devices and logic gates with undoped silicon nanowires.
Mongillo M, Spathis P, Katsaros G, Gentile P, De Franceschi S. Mongillo M, et al. Among authors: De Franceschi S. Nano Lett. 2012 Jun 13;12(6):3074-9. doi: 10.1021/nl300930m. Epub 2012 May 29. Nano Lett. 2012. PMID: 22594644
Observation of spin-selective tunneling in SiGe nanocrystals.
Katsaros G, Golovach VN, Spathis P, Ares N, Stoffel M, Fournel F, Schmidt OG, Glazman LI, De Franceschi S. Katsaros G, et al. Among authors: De Franceschi S. Phys Rev Lett. 2011 Dec 9;107(24):246601. doi: 10.1103/PhysRevLett.107.246601. Epub 2011 Dec 7. Phys Rev Lett. 2011. PMID: 22243017
Nature of tunable hole g factors in quantum dots.
Ares N, Golovach VN, Katsaros G, Stoffel M, Fournel F, Glazman LI, Schmidt OG, De Franceschi S. Ares N, et al. Among authors: De Franceschi S. Phys Rev Lett. 2013 Jan 25;110(4):046602. doi: 10.1103/PhysRevLett.110.046602. Epub 2013 Jan 23. Phys Rev Lett. 2013. PMID: 25166183
Split-Channel Ballistic Transport in an InSb Nanowire.
Estrada Saldaña JC, Niquet YM, Cleuziou JP, Lee EJH, Car D, Plissard SR, Bakkers EPAM, De Franceschi S. Estrada Saldaña JC, et al. Among authors: De Franceschi S. Nano Lett. 2018 Apr 11;18(4):2282-2287. doi: 10.1021/acs.nanolett.7b03854. Epub 2018 Mar 7. Nano Lett. 2018. PMID: 29513545
Joule-assisted silicidation for short-channel silicon nanowire devices.
Mongillo M, Spathis P, Katsaros G, Gentile P, Sanquer M, De Franceschi S. Mongillo M, et al. Among authors: De Franceschi S. ACS Nano. 2011 Sep 27;5(9):7117-23. doi: 10.1021/nn202524j. Epub 2011 Aug 17. ACS Nano. 2011. PMID: 21815658
Zero-bias anomaly in a nanowire quantum dot coupled to superconductors.
Lee EJ, Jiang X, Aguado R, Katsaros G, Lieber CM, De Franceschi S. Lee EJ, et al. Among authors: De Franceschi S. Phys Rev Lett. 2012 Nov 2;109(18):186802. doi: 10.1103/PhysRevLett.109.186802. Epub 2012 Oct 31. Phys Rev Lett. 2012. PMID: 23215310
Electrical Spin Driving by g-Matrix Modulation in Spin-Orbit Qubits.
Crippa A, Maurand R, Bourdet L, Kotekar-Patil D, Amisse A, Jehl X, Sanquer M, Laviéville R, Bohuslavskyi H, Hutin L, Barraud S, Vinet M, Niquet YM, De Franceschi S. Crippa A, et al. Among authors: De Franceschi S. Phys Rev Lett. 2018 Mar 30;120(13):137702. doi: 10.1103/PhysRevLett.120.137702. Phys Rev Lett. 2018. PMID: 29694195
Few-electron edge-state quantum dots in a silicon nanowire field-effect transistor.
Voisin B, Nguyen VH, Renard J, Jehl X, Barraud S, Triozon F, Vinet M, Duchemin I, Niquet YM, de Franceschi S, Sanquer M. Voisin B, et al. Among authors: de Franceschi S. Nano Lett. 2014;14(4):2094-8. doi: 10.1021/nl500299h. Epub 2014 Mar 14. Nano Lett. 2014. PMID: 24611581
Germanium Quantum-Well Josephson Field-Effect Transistors and Interferometers.
Vigneau F, Mizokuchi R, Zanuz DC, Huang X, Tan S, Maurand R, Frolov S, Sammak A, Scappucci G, Lefloch F, De Franceschi S. Vigneau F, et al. Among authors: De Franceschi S. Nano Lett. 2019 Feb 13;19(2):1023-1027. doi: 10.1021/acs.nanolett.8b04275. Epub 2019 Jan 22. Nano Lett. 2019. PMID: 30633528
Level Spectrum and Charge Relaxation in a Silicon Double Quantum Dot Probed by Dual-Gate Reflectometry.
Crippa A, Maurand R, Kotekar-Patil D, Corna A, Bohuslavskyi H, Orlov AO, Fay P, Laviéville R, Barraud S, Vinet M, Sanquer M, De Franceschi S, Jehl X. Crippa A, et al. Among authors: De Franceschi S. Nano Lett. 2017 Feb 8;17(2):1001-1006. doi: 10.1021/acs.nanolett.6b04354. Epub 2017 Jan 12. Nano Lett. 2017. PMID: 28080065
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