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Diameter-dependent electron mobility of InAs nanowires.
Ford AC, Ho JC, Chueh YL, Tseng YC, Fan Z, Guo J, Bokor J, Javey A. Ford AC, et al. Nano Lett. 2009 Jan;9(1):360-5. doi: 10.1021/nl803154m. Nano Lett. 2009. PMID: 19143505
Quantum confinement effects in nanoscale-thickness InAs membranes.
Takei K, Fang H, Kumar SB, Kapadia R, Gao Q, Madsen M, Kim HS, Liu CH, Chueh YL, Plis E, Krishna S, Bechtel HA, Guo J, Javey A. Takei K, et al. Nano Lett. 2011 Nov 9;11(11):5008-12. doi: 10.1021/nl2030322. Epub 2011 Oct 21. Nano Lett. 2011. PMID: 22007924
Dual-gated MoS2/WSe2 van der Waals tunnel diodes and transistors.
Roy T, Tosun M, Cao X, Fang H, Lien DH, Zhao P, Chen YZ, Chueh YL, Guo J, Javey A. Roy T, et al. ACS Nano. 2015 Feb 24;9(2):2071-9. doi: 10.1021/nn507278b. Epub 2015 Jan 26. ACS Nano. 2015. PMID: 25598307
Two-Dimensional Intrinsic Half-Metals With Large Spin Gaps.
Ashton M, Gluhovic D, Sinnott SB, Guo J, Stewart DA, Hennig RG. Ashton M, et al. Nano Lett. 2017 Sep 13;17(9):5251-5257. doi: 10.1021/acs.nanolett.7b01367. Epub 2017 Aug 4. Nano Lett. 2017. PMID: 28745061
Strain-induced indirect to direct bandgap transition in multilayer WSe2.
Desai SB, Seol G, Kang JS, Fang H, Battaglia C, Kapadia R, Ager JW, Guo J, Javey A. Desai SB, et al. Nano Lett. 2014 Aug 13;14(8):4592-7. doi: 10.1021/nl501638a. Epub 2014 Jul 7. Nano Lett. 2014. PMID: 24988370
Ballistic InAs nanowire transistors.
Chuang S, Gao Q, Kapadia R, Ford AC, Guo J, Javey A. Chuang S, et al. Nano Lett. 2013 Feb 13;13(2):555-8. doi: 10.1021/nl3040674. Epub 2013 Jan 3. Nano Lett. 2013. PMID: 23256503
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