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2,682 results

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The following term was not found in PubMed: Cajdin
Page 1
Sn-InAs Nanowire Shadow-Defined Josephson Junctions.
Sharma A, Chen AH, Dempsey CP, Purkayastha A, Pendharkar M, Tan S, Palmstrøm CJ, Frolov SM, Hocevar M. Sharma A, et al. Nano Lett. 2025 Aug 27;25(34):12869-12875. doi: 10.1021/acs.nanolett.5c02410. Epub 2025 Aug 15. Nano Lett. 2025. PMID: 40815279
Here, we report the synthesis and analysis of inclined InAs nanowires, conformally coated with beta-Sn shells. These nanowires extend in opposite in-plane directions, forming a self-aligned, criss-cross network. ...These results establish beta-Sn/InAs nanowire netwo …
Here, we report the synthesis and analysis of inclined InAs nanowires, conformally coated with beta-Sn shells. These nanowires extend …
InAs/InAsSb Type-II Strained-Layer Superlattice Infrared Photodetectors.
Ting DZ, Rafol SB, Khoshakhlagh A, Soibel A, Keo SA, Fisher AM, Pepper BJ, Hill CJ, Gunapala SD. Ting DZ, et al. Micromachines (Basel). 2020 Oct 26;11(11):958. doi: 10.3390/mi11110958. Micromachines (Basel). 2020. PMID: 33114617 Free PMC article. Review.
When coupled with the unipolar barrier infrared detector architecture, the InAs/InAsSb T2SLS mid-wavelength infrared (MWIR) focal plane array (FPA) has demonstrated a significantly higher operating temperature than InSb FPA, a major incumbent technology. In this brief revi …
When coupled with the unipolar barrier infrared detector architecture, the InAs/InAsSb T2SLS mid-wavelength infrared (MWIR) focal pla …
InAs/MoRe Hybrid Semiconductor/Superconductor Nanowire Devices.
Kousar B, Carrad DJ, Stampfer L, Krogstrup P, Nygård J, Jespersen TS. Kousar B, et al. Nano Lett. 2022 Nov 23;22(22):8845-8851. doi: 10.1021/acs.nanolett.2c02532. Epub 2022 Nov 4. Nano Lett. 2022. PMID: 36332116
Here, we study the performance of devices consisting of InAs nanowires in electrical contact with molybdenum-rhenium (MoRe) superconducting alloys. ...
Here, we study the performance of devices consisting of InAs nanowires in electrical contact with molybdenum-rhenium (MoRe) supercond …
Low threshold InAs/InP quantum dot lasers.
Park JS, Jia H, Zeng H, Wang Y, Yuan J, Li J, Liu S, Dear C, Liu K, Chen C, Deng H, Martin M, Li Q, Baron T, Tang M, Seeds A, Liu H. Park JS, et al. Opt Express. 2025 May 5;33(9):19158-19165. doi: 10.1364/OE.561471. Opt Express. 2025. PMID: 40515129 Free article.
However, challenges remain in achieving uniform QDs on the InAs/InAlGaAs/InP material system to ensure low threshold current density and high-temperature operation. This work demonstrates low threshold, high-temperature L-band InAs/InAlGaAs/InP QD lasers grown on In …
However, challenges remain in achieving uniform QDs on the InAs/InAlGaAs/InP material system to ensure low threshold current density …
Zincblende InAs(x)P(1-x)/InP Quantum Dot Nanowires for Telecom Wavelength Emission.
Bucci G, Zannier V, Rossi F, Musiał A, Boniecki J, Sęk G, Sorba L. Bucci G, et al. ACS Appl Mater Interfaces. 2024 May 22;16(20):26491-26499. doi: 10.1021/acsami.4c00615. Epub 2024 May 10. ACS Appl Mater Interfaces. 2024. PMID: 38729621 Free PMC article.
InAs(x)P(1-x) quantum dots (QDs) in InP nanowires (NWs) have been realized as a platform for emission at telecom wavelengths. ...Interestingly, we found that the growth mechanism for pure InAs QDs is different compared to that for InAs(x)P(1-x) alloy QDs. Thi …
InAs(x)P(1-x) quantum dots (QDs) in InP nanowires (NWs) have been realized as a platform for emission at telecom wavelengths. ...Inte …
InAs nanowire arrays for room-temperature ultra-broadband infrared photodetection.
Li Z, Azimi Z, Li Z, Yu Y, Huang L, Jin W, Tan HH, Jagadish C, Wong-Leung J, Fu L. Li Z, et al. Nanoscale. 2023 Jun 15;15(23):10033-10041. doi: 10.1039/d3nr00340j. Nanoscale. 2023. PMID: 37248736
By using selective area metal-organic vapour-phase epitaxy, we optimise the nanowire growth temperature and V/III ratio to achieve wurtzite (WZ)-based InAs nanowire arrays with a high WZ density of 67%. Due to the n-type background doping of the InAs nanowires and …
By using selective area metal-organic vapour-phase epitaxy, we optimise the nanowire growth temperature and V/III ratio to achieve wurtzite …
High-quality vertically aligned InAs nanowires grown by molecular-beam epitaxy using Ag-In alloy segregation.
Liu L, Pan D, Wen L, Zhuo R, Zhao J. Liu L, et al. Nanotechnology. 2023 Mar 14;34(22). doi: 10.1088/1361-6528/acbeb2. Nanotechnology. 2023. PMID: 36827703
InAs nanowires show important potential applications in novel nanoelectronic devices, infrared optoelectronic devices and quantum devices, and all these applications require controllable growth of the InAs nanowires. ...The vertically aligned one-dimensional InAs …
InAs nanowires show important potential applications in novel nanoelectronic devices, infrared optoelectronic devices and quantum dev …
Large-Composition-Range Pure-Phase Homogeneous InAs(1-x)Sb(x) Nanowires.
Wen L, Pan D, Liu L, Tong S, Zhuo R, Zhao J. Wen L, et al. J Phys Chem Lett. 2022 Jan 20;13(2):598-605. doi: 10.1021/acs.jpclett.1c04001. Epub 2022 Jan 12. J Phys Chem Lett. 2022. PMID: 35019661
However, the fabrication of large-composition-range pure-phase homogeneous InAs(1-x)Sb(x) nanowires remains a huge challenge. Here, we first report the growth of large-composition-range stemless InAs(1-x)Sb(x) nanowires (0 x 0.63) on Si (111) substrates by molec …
However, the fabrication of large-composition-range pure-phase homogeneous InAs(1-x)Sb(x) nanowires remains a huge challenge. Here, w …
Wet-chemical passivation of InAs: toward surfaces with high stability and low toxicity.
Jewett SA, Ivanisevic A. Jewett SA, et al. Acc Chem Res. 2012 Sep 18;45(9):1451-9. doi: 10.1021/ar200282f. Epub 2012 Jun 20. Acc Chem Res. 2012. PMID: 22716947 Review.
Both sulfides and alkanethiols form well-defined monolayers on InAs and are dominated by In-S interactions. Sulfur-passivated InAs surfaces prevent regrowth of the surface oxide layer and are more stable in air than unpassivated surfaces. Although functionalization …
Both sulfides and alkanethiols form well-defined monolayers on InAs and are dominated by In-S interactions. Sulfur-passivated InAs …
Colloidal InAs Tetrapods: Impact of Surfactants on the Shape Control.
Liu Z, Pascazio R, Goldoni L, Maggioni D, Zhu D, Ivanov YP, Divitini G, Camarelles JL, Jalali HB, Infante I, De Trizio L, Manna L. Liu Z, et al. J Am Chem Soc. 2023 Aug 23;145(33):18329-18339. doi: 10.1021/jacs.3c03906. Epub 2023 Aug 8. J Am Chem Soc. 2023. PMID: 37608781 Free PMC article.
We found that carboxylic and phosphonic acids led only to oxides, whereas tri-n-octylphosphine, dioctylamine, or trioctylamine (TOA), when employed as the sole ligands, yielded InAs NCs with irregular sizes and a broad size distribution. Instead, various combinations of TO …
We found that carboxylic and phosphonic acids led only to oxides, whereas tri-n-octylphosphine, dioctylamine, or trioctylamine (TOA), when e …
2,682 results