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Energy-band engineering for improved charge retention in fully self-aligned double floating-gate single-electron memories.
Tang X, Krzeminski C, Lecavelier des Etangs-Levallois A, Chen Z, Dubois E, Kasper E, Karmous A, Reckinger N, Flandre D, Francis LA, Colinge JP, Raskin JP. Tang X, et al. Among authors: karmous a. Nano Lett. 2011 Nov 9;11(11):4520-6. doi: 10.1021/nl202434k. Epub 2011 Oct 17. Nano Lett. 2011. PMID: 21967002
Ge quantum dot memory structure with laterally ordered highly dense arrays of Ge dots.
Nassiopoulou AG, Olzierski A, Tsoi E, Berbezier I, Karmous A. Nassiopoulou AG, et al. Among authors: karmous a. J Nanosci Nanotechnol. 2007 Jan;7(1):316-21. J Nanosci Nanotechnol. 2007. PMID: 17455497
Statistical age-period-cohort analysis: a review and critique.
Kupper LL, Janis JM, Karmous A, Greenberg BG. Kupper LL, et al. Among authors: karmous a. J Chronic Dis. 1985;38(10):811-30. doi: 10.1016/0021-9681(85)90105-5. J Chronic Dis. 1985. PMID: 4044767
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