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Channel length scaling of MoS2 MOSFETs.
Liu H, Neal AT, Ye PD. Liu H, et al. ACS Nano. 2012 Oct 23;6(10):8563-9. doi: 10.1021/nn303513c. Epub 2012 Sep 12. ACS Nano. 2012. PMID: 22957650
Phosphorene: an unexplored 2D semiconductor with a high hole mobility.
Liu H, Neal AT, Zhu Z, Luo Z, Xu X, Tománek D, Ye PD. Liu H, et al. ACS Nano. 2014 Apr 22;8(4):4033-41. doi: 10.1021/nn501226z. Epub 2014 Mar 21. ACS Nano. 2014. PMID: 24655084
Statistical study of deep submicron dual-gated field-effect transistors on monolayer chemical vapor deposition molybdenum disulfide films.
Liu H, Si M, Najmaei S, Neal AT, Du Y, Ajayan PM, Lou J, Ye PD. Liu H, et al. Nano Lett. 2013 Jun 12;13(6):2640-6. doi: 10.1021/nl400778q. Epub 2013 May 20. Nano Lett. 2013. PMID: 23679044
Chloride molecular doping technique on 2D materials: WS2 and MoS2.
Yang L, Majumdar K, Liu H, Du Y, Wu H, Hatzistergos M, Hung PY, Tieckelmann R, Tsai W, Hobbs C, Ye PD. Yang L, et al. Nano Lett. 2014 Nov 12;14(11):6275-80. doi: 10.1021/nl502603d. Epub 2014 Oct 14. Nano Lett. 2014. PMID: 25310177
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