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Vertical field-effect transistor based on graphene-WS2 heterostructures for flexible and transparent electronics.
Georgiou T, Jalil R, Belle BD, Britnell L, Gorbachev RV, Morozov SV, Kim YJ, Gholinia A, Haigh SJ, Makarovsky O, Eaves L, Ponomarenko LA, Geim AK, Novoselov KS, Mishchenko A. Georgiou T, et al. Among authors: makarovsky o. Nat Nanotechnol. 2013 Feb;8(2):100-3. doi: 10.1038/nnano.2012.224. Epub 2012 Dec 23. Nat Nanotechnol. 2013. PMID: 23263726
Tuning the bandgap of exfoliated InSe nanosheets by quantum confinement.
Mudd GW, Svatek SA, Ren T, Patanè A, Makarovsky O, Eaves L, Beton PH, Kovalyuk ZD, Lashkarev GV, Kudrynskyi ZR, Dmitriev AI. Mudd GW, et al. Among authors: makarovsky o. Adv Mater. 2013 Oct 25;25(40):5714-8. doi: 10.1002/adma.201302616. Epub 2013 Aug 21. Adv Mater. 2013. PMID: 23966225 Free PMC article.
Twist-controlled resonant tunnelling in graphene/boron nitride/graphene heterostructures.
Mishchenko A, Tu JS, Cao Y, Gorbachev RV, Wallbank JR, Greenaway MT, Morozov VE, Morozov SV, Zhu MJ, Wong SL, Withers F, Woods CR, Kim YJ, Watanabe K, Taniguchi T, Vdovin EE, Makarovsky O, Fromhold TM, Fal'ko VI, Geim AK, Eaves L, Novoselov KS. Mishchenko A, et al. Among authors: makarovsky o. Nat Nanotechnol. 2014 Oct;9(10):808-13. doi: 10.1038/nnano.2014.187. Epub 2014 Sep 7. Nat Nanotechnol. 2014. PMID: 25194946
Phonon-Assisted Resonant Tunneling of Electrons in Graphene-Boron Nitride Transistors.
Vdovin EE, Mishchenko A, Greenaway MT, Zhu MJ, Ghazaryan D, Misra A, Cao Y, Morozov SV, Makarovsky O, Fromhold TM, Patanè A, Slotman GJ, Katsnelson MI, Geim AK, Novoselov KS, Eaves L. Vdovin EE, et al. Among authors: makarovsky o. Phys Rev Lett. 2016 May 6;116(18):186603. doi: 10.1103/PhysRevLett.116.186603. Epub 2016 May 5. Phys Rev Lett. 2016. PMID: 27203338
23 results