Menzel S - Search Results

1

Understanding filamentary growth in electrochemical metallization memory cells using kinetic Monte Carlo simulations.

Menzel S, Kaupmann P, Waser R. Menzel S, et al. Nanoscale. 2015 Aug 7;7(29):12673-81. doi: 10.1039/c5nr02258d. Epub 2015 Jul 7. Nanoscale. 2015. PMID: 26150320

2

Switching kinetics of electrochemical metallization memory cells.

Menzel S, Tappertzhofen S, Waser R, Valov I. Menzel S, et al. Phys Chem Chem Phys. 2013 May 14;15(18):6945-52. doi: 10.1039/c3cp50738f. Epub 2013 Apr 3. Phys Chem Chem Phys. 2013. PMID: 23549450

3

Analytical analysis of the generic SET and RESET characteristics of electrochemical metallization memory cells.

Menzel S, Waser R. Menzel S, et al. Nanoscale. 2013 Nov 21;5(22):11003-10. doi: 10.1039/c3nr03387b. Epub 2013 Sep 25. Nanoscale. 2013. PMID: 24065212

4

Spectroscopic proof of the correlation between redox-state and charge-carrier transport at the interface of resistively switching Ti/PCMO devices.

Herpers A, Lenser C, Park C, Offi F, Borgatti F, Panaccione G, Menzel S, Waser R, Dittmann R. Herpers A, et al. Among authors: menzel s. Adv Mater. 2014 May;26(17):2730-5. doi: 10.1002/adma.201304054. Epub 2014 Apr 6. Adv Mater. 2014. PMID: 24706476

5

Low-current operations in 4F(2)-compatible Ta2O5-based complementary resistive switches.

Breuer T, Siemon A, Linn E, Menzel S, Waser R, Rana V. Breuer T, et al. Among authors: menzel s. Nanotechnology. 2015 Oct 16;26(41):415202. doi: 10.1088/0957-4484/26/41/415202. Epub 2015 Sep 25. Nanotechnology. 2015. PMID: 26403696

6

Impact of oxygen exchange reaction at the ohmic interface in Ta₂O₅-based ReRAM devices.

Kim W, Menzel S, Wouters DJ, Guo Y, Robertson J, Roesgen B, Waser R, Rana V. Kim W, et al. Among authors: menzel s. Nanoscale. 2016 Oct 20;8(41):17774-17781. doi: 10.1039/c6nr03810g. Nanoscale. 2016. PMID: 27523172

7

Quantifying redox-induced Schottky barrier variations in memristive devices via in operando spectromicroscopy with graphene electrodes.

Baeumer C, Schmitz C, Marchewka A, Mueller DN, Valenta R, Hackl J, Raab N, Rogers SP, Khan MI, Nemsak S, Shim M, Menzel S, Schneider CM, Waser R, Dittmann R. Baeumer C, et al. Among authors: menzel s. Nat Commun. 2016 Aug 19;7:12398. doi: 10.1038/ncomms12398. Nat Commun. 2016. PMID: 27539213 Free PMC article.

8

Volatile HRS asymmetry and subloops in resistive switching oxides.

La Torre C, Kindsmüller A, Wouters DJ, Graves CE, Gibson GA, Strachan JP, Williams RS, Waser R, Menzel S. La Torre C, et al. Among authors: menzel s. Nanoscale. 2017 Oct 5;9(38):14414-14422. doi: 10.1039/c7nr04896c. Nanoscale. 2017. PMID: 28920125

9

Understanding the Coexistence of Two Bipolar Resistive Switching Modes with Opposite Polarity in Pt/TiO₂/Ti/Pt Nanosized ReRAM Devices.

Zhang H, Yoo S, Menzel S, Funck C, Cüppers F, Wouters DJ, Hwang CS, Waser R, Hoffmann-Eifert S. Zhang H, et al. Among authors: menzel s. ACS Appl Mater Interfaces. 2018 Sep 5;10(35):29766-29778. doi: 10.1021/acsami.8b09068. Epub 2018 Aug 23. ACS Appl Mater Interfaces. 2018. PMID: 30088755

10

In-Gap States and Band-Like Transport in Memristive Devices.

Baeumer C, Funck C, Locatelli A, Menteş TO, Genuzio F, Heisig T, Hensling F, Raab N, Schneider CM, Menzel S, Waser R, Dittmann R. Baeumer C, et al. Among authors: menzel s. Nano Lett. 2019 Jan 9;19(1):54-60. doi: 10.1021/acs.nanolett.8b03023. Epub 2018 Sep 27. Nano Lett. 2019. PMID: 30241437

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