Rai A - Search Results

1

High-Mobility Holes in Dual-Gated WSe2 Field-Effect Transistors.

Movva HC, Rai A, Kang S, Kim K, Fallahazad B, Taniguchi T, Watanabe K, Tutuc E, Banerjee SK. Movva HC, et al. Among authors: rai a. ACS Nano. 2015 Oct 27;9(10):10402-10. doi: 10.1021/acsnano.5b04611. Epub 2015 Sep 14. ACS Nano. 2015. PMID: 26343531

2

Field effect transistors with current saturation and voltage gain in ultrathin ReS2.

Corbet CM, McClellan C, Rai A, Sonde SS, Tutuc E, Banerjee SK. Corbet CM, et al. Among authors: rai a. ACS Nano. 2015 Jan 27;9(1):363-70. doi: 10.1021/nn505354a. Epub 2014 Dec 24. ACS Nano. 2015. PMID: 25514177

3

Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer Molybdenum Disulfide by Amorphous Titanium Suboxide Encapsulation.

Rai A, Valsaraj A, Movva HC, Roy A, Ghosh R, Sonde S, Kang S, Chang J, Trivedi T, Dey R, Guchhait S, Larentis S, Register LF, Tutuc E, Banerjee SK. Rai A, et al. Nano Lett. 2015 Jul 8;15(7):4329-36. doi: 10.1021/acs.nanolett.5b00314. Epub 2015 Jun 26. Nano Lett. 2015. PMID: 26091062

4

Effects of Electrode Layer Band Structure on the Performance of Multilayer Graphene-hBN-Graphene Interlayer Tunnel Field Effect Transistors.

Kang S, Prasad N, Movva HC, Rai A, Kim K, Mou X, Taniguchi T, Watanabe K, Register LF, Tutuc E, Banerjee SK. Kang S, et al. Among authors: rai a. Nano Lett. 2016 Aug 10;16(8):4975-81. doi: 10.1021/acs.nanolett.6b01646. Epub 2016 Jul 20. Nano Lett. 2016. PMID: 27416362

5

Reconfigurable Complementary Monolayer MoTe₂ Field-Effect Transistors for Integrated Circuits.

Larentis S, Fallahazad B, Movva HCP, Kim K, Rai A, Taniguchi T, Watanabe K, Banerjee SK, Tutuc E. Larentis S, et al. Among authors: rai a. ACS Nano. 2017 May 23;11(5):4832-4839. doi: 10.1021/acsnano.7b01306. Epub 2017 Apr 17. ACS Nano. 2017. PMID: 28414214

6

Visualization of Local Conductance in MoS₂/WSe₂ Heterostructure Transistors.

Wu D, Li W, Rai A, Wu X, Movva HCP, Yogeesh MN, Chu Z, Banerjee SK, Akinwande D, Lai K. Wu D, et al. Among authors: rai a. Nano Lett. 2019 Mar 13;19(3):1976-1981. doi: 10.1021/acs.nanolett.8b05159. Epub 2019 Feb 21. Nano Lett. 2019. PMID: 30779591

7

Perpendicular Magnetic Anisotropy and Spin Glass-like Behavior in Molecular Beam Epitaxy Grown Chromium Telluride Thin Films.

Roy A, Guchhait S, Dey R, Pramanik T, Hsieh CC, Rai A, Banerjee SK. Roy A, et al. Among authors: rai a. ACS Nano. 2015 Apr 28;9(4):3772-9. doi: 10.1021/nn5065716. Epub 2015 Apr 13. ACS Nano. 2015. PMID: 25848950

8

Radio Frequency Transistors and Circuits Based on CVD MoS2.

Sanne A, Ghosh R, Rai A, Yogeesh MN, Shin SH, Sharma A, Jarvis K, Mathew L, Rao R, Akinwande D, Banerjee S. Sanne A, et al. Among authors: rai a. Nano Lett. 2015 Aug 12;15(8):5039-45. doi: 10.1021/acs.nanolett.5b01080. Epub 2015 Jul 8. Nano Lett. 2015. PMID: 26134588

9

Structural and Electrical Properties of MoTe2 and MoSe2 Grown by Molecular Beam Epitaxy.

Roy A, Movva HC, Satpati B, Kim K, Dey R, Rai A, Pramanik T, Guchhait S, Tutuc E, Banerjee SK. Roy A, et al. Among authors: rai a. ACS Appl Mater Interfaces. 2016 Mar 23;8(11):7396-402. doi: 10.1021/acsami.6b00961. Epub 2016 Mar 11. ACS Appl Mater Interfaces. 2016. PMID: 26939890

10

Band Structure Engineering of Layered WSe₂ via One-Step Chemical Functionalization.

Park JH, Rai A, Hwang J, Zhang C, Kwak I, Wolf SF, Vishwanath S, Liu X, Dobrowolska M, Furdyna J, Xing HG, Cho K, Banerjee SK, Kummel AC. Park JH, et al. Among authors: rai a. ACS Nano. 2019 Jul 23;13(7):7545-7555. doi: 10.1021/acsnano.8b09351. Epub 2019 Jul 1. ACS Nano. 2019. PMID: 31260257

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