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Proposal for an all-spin logic device with built-in memory.
Behin-Aein B, Datta D, Salahuddin S, Datta S. Behin-Aein B, et al. Among authors: salahuddin s. Nat Nanotechnol. 2010 Apr;5(4):266-70. doi: 10.1038/nnano.2010.31. Epub 2010 Feb 28. Nat Nanotechnol. 2010. PMID: 20190748
Spatially resolved steady-state negative capacitance.
Yadav AK, Nguyen KX, Hong Z, García-Fernández P, Aguado-Puente P, Nelson CT, Das S, Prasad B, Kwon D, Cheema S, Khan AI, Hu C, Íñiguez J, Junquera J, Chen LQ, Muller DA, Ramesh R, Salahuddin S. Yadav AK, et al. Among authors: salahuddin s. Nature. 2019 Jan;565(7740):468-471. doi: 10.1038/s41586-018-0855-y. Epub 2019 Jan 14. Nature. 2019. PMID: 30643207
Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors.
Ko H, Takei K, Kapadia R, Chuang S, Fang H, Leu PW, Ganapathi K, Plis E, Kim HS, Chen SY, Madsen M, Ford AC, Chueh YL, Krishna S, Salahuddin S, Javey A. Ko H, et al. Among authors: salahuddin s. Nature. 2010 Nov 11;468(7321):286-9. doi: 10.1038/nature09541. Nature. 2010. PMID: 21068839
Use of negative capacitance to provide voltage amplification for low power nanoscale devices.
Salahuddin S, Datta S. Salahuddin S, et al. Nano Lett. 2008 Feb;8(2):405-10. doi: 10.1021/nl071804g. Epub 2007 Dec 6. Nano Lett. 2008. PMID: 18052402
Single crystal functional oxides on silicon.
Bakaul SR, Serrao CR, Lee M, Yeung CW, Sarker A, Hsu SL, Yadav AK, Dedon L, You L, Khan AI, Clarkson JD, Hu C, Ramesh R, Salahuddin S. Bakaul SR, et al. Among authors: salahuddin s. Nat Commun. 2016 Feb 8;7:10547. doi: 10.1038/ncomms10547. Nat Commun. 2016. PMID: 26853112 Free PMC article.
Memory leads the way to better computing.
Wong HS, Salahuddin S. Wong HS, et al. Among authors: salahuddin s. Nat Nanotechnol. 2015 Mar;10(3):191-4. doi: 10.1038/nnano.2015.29. Nat Nanotechnol. 2015. PMID: 25740127 No abstract available.
Spin Hall effect clocking of nanomagnetic logic without a magnetic field.
Bhowmik D, You L, Salahuddin S. Bhowmik D, et al. Among authors: salahuddin s. Nat Nanotechnol. 2014 Jan;9(1):59-63. doi: 10.1038/nnano.2013.241. Epub 2013 Nov 17. Nat Nanotechnol. 2014. PMID: 24240430
Deterministic switching of ferromagnetism at room temperature using an electric field.
Heron JT, Bosse JL, He Q, Gao Y, Trassin M, Ye L, Clarkson JD, Wang C, Liu J, Salahuddin S, Ralph DC, Schlom DG, Iñiguez J, Huey BD, Ramesh R. Heron JT, et al. Among authors: salahuddin s. Nature. 2014 Dec 18;516(7531):370-3. doi: 10.1038/nature14004. Nature. 2014. PMID: 25519134
Author Correction: Spatially resolved steady-state negative capacitance.
Yadav AK, Nguyen KX, Hong Z, García-Fernández P, Aguado-Puente P, Nelson CT, Das S, Prasad B, Kwon D, Cheema S, Khan AI, Hu C, Íñiguez J, Junquera J, Chen LQ, Muller DA, Ramesh R, Salahuddin S. Yadav AK, et al. Among authors: salahuddin s. Nature. 2019 Apr;568(7753):E13. doi: 10.1038/s41586-019-1106-6. Nature. 2019. PMID: 30971827
Negative capacitance in a ferroelectric capacitor.
Khan AI, Chatterjee K, Wang B, Drapcho S, You L, Serrao C, Bakaul SR, Ramesh R, Salahuddin S. Khan AI, et al. Among authors: salahuddin s. Nat Mater. 2015 Feb;14(2):182-6. doi: 10.1038/nmat4148. Epub 2014 Dec 15. Nat Mater. 2015. PMID: 25502099
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