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Electroelastic hyperfine tuning of phosphorus donors in silicon.
Dreher L, Hilker TA, Brandlmaier A, Goennenwein ST, Huebl H, Stutzmann M, Brandt MS. Dreher L, et al. Among authors: stutzmann m. Phys Rev Lett. 2011 Jan 21;106(3):037601. doi: 10.1103/PhysRevLett.106.037601. Epub 2011 Jan 18. Phys Rev Lett. 2011. PMID: 21405299
Pulsed-light soaking of hydrogenated amorphous silicon.
Stutzmann M, Rossi MC, Brandt MS. Stutzmann M, et al. Phys Rev B Condens Matter. 1994 Oct 15;50(16):11592-11605. doi: 10.1103/physrevb.50.11592. Phys Rev B Condens Matter. 1994. PMID: 9975292 No abstract available.
Defect creation in amorphous-silicon thin-film transistors.
Graeff CF, Brandt MS, Stutzmann M, Powell MJ. Graeff CF, et al. Among authors: stutzmann m. Phys Rev B Condens Matter. 1995 Aug 15;52(7):4680-4683. doi: 10.1103/physrevb.52.4680. Phys Rev B Condens Matter. 1995. PMID: 9981633 No abstract available.
Spin-dependent conductivity in amorphous hydrogenated silicon.
Brandt MS, Stutzmann M. Brandt MS, et al. Among authors: stutzmann m. Phys Rev B Condens Matter. 1991 Feb 15;43(6):5184-5187. doi: 10.1103/physrevb.43.5184. Phys Rev B Condens Matter. 1991. PMID: 9997906 No abstract available.
Porous silicon and siloxene: Vibrational and structural properties.
Fuchs HD, Stutzmann M, Brandt MS, Rosenbauer M, Weber J, Breitschwerdt A, Deák P, Cardona M. Fuchs HD, et al. Among authors: stutzmann m. Phys Rev B Condens Matter. 1993 Sep 15;48(11):8172-8189. doi: 10.1103/physrevb.48.8172. Phys Rev B Condens Matter. 1993. PMID: 10007009 No abstract available.
108 results